High-temperature molecular screening of hybrid polyOAPS-imide networks based on octa(aminophenyl)silsesquioxane for increased thermomechanical resistance

A new family of hybrid hyper-cross-linked thin films based on inorganic polyhedral oligomeric silsesquioxane (POSS) cages covalently bound with short organic imides has recently been developed using interfacial polycondensation followed...

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Model Polyhedral Oligomeric Silsesquioxane Thin Films for Coating Applications

10.21236/ada410044 ◽

2002 ◽

Author(s):

Brent Viers ◽

Shawn Phillips ◽

Timothy Haddad ◽

Alan Esker ◽

Joe Polidan

Keyword(s):

Thin Films ◽

Polyhedral Oligomeric Silsesquioxane ◽

Oligomeric Silsesquioxane

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In situ synthesis of star copolymers consisting of a polyhedral oligomeric silsesquioxane core and poly(2,5‐benzimidazole) arms for high‐temperature proton exchange membrane fuel cells

International Journal of Energy Research ◽

10.1002/er.5571 ◽

2020 ◽

Vol 44 (11) ◽

pp. 8769-8780 ◽

Cited By ~ 1

Author(s):

Tao Li ◽

Fang Luo ◽

Xudong Fu ◽

Lanxin Li ◽

Jiayuan Min ◽

...

Keyword(s):

Fuel Cells ◽

High Temperature ◽

Proton Exchange Membrane ◽

Polyhedral Oligomeric Silsesquioxane ◽

In Situ Synthesis ◽

Proton Exchange ◽

Star Copolymers ◽

Oligomeric Silsesquioxane ◽

Exchange Membrane

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Polyhedral Oligomeric Silsesquioxane Nanocomposite Thin Films via Layer-by-layer Electrostatic Self-Assembly

Chemistry of Materials ◽

10.1021/cm0607583 ◽

2006 ◽

Vol 18 (16) ◽

pp. 3726-3732 ◽

Cited By ~ 40

Author(s):

Guojun Wu ◽

Zhaohui Su

Keyword(s):

Thin Films ◽

Self Assembly ◽

Polyhedral Oligomeric Silsesquioxane ◽

Layer By Layer ◽

Nanocomposite Thin Films ◽

Oligomeric Silsesquioxane

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Enhanced Photoluminescence Properties of Polyhedral Oligomeric Silsesquioxane-Based Hybrid Phosphors for Anti-Counterfeiting and Flexible Composite Applications

Science of Advanced Materials ◽

10.1166/sam.2021.3950 ◽

2021 ◽

Vol 13 (5) ◽

pp. 748-754

Author(s):

Jae Yong Jung ◽

Soung Soo Yi

Keyword(s):

Thin Films ◽

Colloidal Solution ◽

Uv Light ◽

Polyhedral Oligomeric Silsesquioxane ◽

Photoluminescence Properties ◽

Enhanced Photoluminescence ◽

Pyridinedicarboxylic Acid ◽

Hybrid Complex ◽

Plastic Card ◽

Oligomeric Silsesquioxane

We have described a novel organic-inorganic hybrid polyhedral oligomeric silsesquioxane (POSS) type monomer ligand 2,6-pyridinediamine-bis-propanylheptaisobutyl POSS (PDC-POSS) and synthesized it using rare-earth (RE = Eu3+, Tb3+) doped hybrid complex PDC-POSS phosphors. The PDC-POSS precursor was prepared by (3-aminopropyl) heptaisobutyl POSS, 2,6-pyridinedicarboxylic acid chloride (PDC), and then coordinated with RE3+ using europium and terbium nitrate regents to yield PDC-POSS:RE3+ phosphors. Under UV light (A = 285 nm) excitation, photoluminescence (PL) spectra of Eu3+-doped PDC-POSS were detected at 591, 615, 650, and 693 and those of Tb3+-doped PDC-POSS were monitored at 488, 544, 584, 619, and 647 nm. The thin films with good transmittance were deposited from aqueous colloidal solution of hybrid phosphors on bank notes, plastic card substrates, and cotton fibers to demonstrate the transparency of phosphor thin films, which are feasible for use in anti-counterfeiting applications, which require concealment and identification by the naked eye. In addition, a polymer composite with good flexibility that can be applied to LED chips and display was produced. Finally, it was suggested that PDC-POSS:RE3+ phosphors can be used in various applications.

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Structure and Dewetting Behavior of Polyhedral Oligomeric Silsesquioxane-Filled Polystyrene Thin Films

Langmuir ◽

10.1021/la062255h ◽

2007 ◽

Vol 23 (2) ◽

pp. 902-907 ◽

Cited By ~ 36

Author(s):

Nao Hosaka ◽

Naoya Torikai ◽

Hideyuki Otsuka ◽

Atsushi Takahara

Keyword(s):

Thin Films ◽

Polyhedral Oligomeric Silsesquioxane ◽

Oligomeric Silsesquioxane

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Studies of dodecaphenyl polyhedral oligomeric silsesquioxane thin films on Si(100) wafers

Journal of Molecular Structure ◽

10.1016/j.molstruc.2014.02.053 ◽

2014 ◽

Vol 1065-1066 ◽

pp. 248-253 ◽

Cited By ~ 3

Author(s):

Bartosz Handke ◽

Łukasz Klita ◽

Jacek Nizioł ◽

Witold Jastrzębski ◽

Anna Adamczyk

Keyword(s):

Thin Films ◽

Polyhedral Oligomeric Silsesquioxane ◽

Oligomeric Silsesquioxane

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Atomic Oxygen-Resistant Polyimide Composite Films Containing Nanocaged Polyhedral Oligomeric Silsesquioxane Components in Matrix and Fillers

Nanomaterials ◽

10.3390/nano11010141 ◽

2021 ◽

Vol 11 (1) ◽

pp. 141

Author(s):

Yan Zhang ◽

Hao Wu ◽

Yi-dan Guo ◽

Yan-bin Yang ◽

Qiang Yu ◽

...

Keyword(s):

High Temperature ◽

Atomic Oxygen ◽

Composite Films ◽

Linear Thermal Expansion ◽

Polyhedral Oligomeric Silsesquioxane ◽

Low Earth Orbit ◽

Aromatic Diamine ◽

Self Healing ◽

Passivation Layers ◽

Oligomeric Silsesquioxane

For the development of spacecraft with long-servicing life in low earth orbit (LEO), high-temperature resistant polymer films with long-term atomic oxygen (AO) resistant features are highly desired. The relatively poor AO resistance of standard polyimide (PI) films greatly limited their applications in LEO spacecraft. In this work, we successfully prepared a series of novel AO resistant PI composite films containing nanocaged polyhedral oligomeric silsesquioxane (POSS) components in both the PI matrix and the fillers. The POSS-containing PI matrix film was prepared from a POSS-substituted aromatic diamine, N-[(heptaisobutyl-POSS)propyl]-3,5-diaminobenzamide (DABA-POSS) and a common aromatic diamine, 4,4′-oxydianline (ODA) and the aromatic dianhydride, pyromellitic dianhydride (PMDA) by a two-step thermal imidization procedure. The POSS-containing filler, trisilanolphenyl POSS (TSP-POSS) was added with the fixed proportion of 20 wt% in the final films. Incorporation of TSP-POSS additive apparently improved the thermal stability, but decreased the high-temperature dimensional stable nature of the PI composite films. The 5% weight loss temperature (T5%) of POSS-PI-20 with 20 wt% of DABA-POSS is 564 °C, and its coefficient of linear thermal expansion (CTE) is 81.0 × 10−6/K. The former is 16 °C lower and the latter was 20.0 × 10−6/K higher than those of the POSS-PI-10 film (T5% = 580 °C, CTE = 61.0 × 10−6/K), respectively. POSS components endowed the PI composite films excellent AO resistance and self-healing characteristics in AO environments. POSS-PI-30 exhibits the lowest AO erosion yield (Es) of 1.64 × 10−26 cm3/atom under AO exposure with a flux of 2.51 × 1021 atoms/cm2, which is more than two orders of magnitude lower than the referenced PI (PMDA-ODA) film. Inert silica or silicate passivation layers were detected on the surface of the PI composite films exposed to AO.

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