Enhancing Deep-UV Emission at 234 nm by Introducing Truncated Pyramid AlN/GaN Nanostructure with Fine-tuned Multiple Facets

Nanoscale ◽  
2021 ◽  
Author(s):  
Shiqiang Lu ◽  
Xinjun Jiang ◽  
Yaozeng Wang ◽  
Kai Huang ◽  
Na Gao ◽  
...  
Keyword(s):  
Wavelength Range ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Al Content ◽  
Uv Emission ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
High Al Content ◽  
Truncated Pyramid

The external quantum efficiency of a high-Al content (>0.6) AlGaN deep-ultraviolet (DUV) light-emitting diode is typically below 1% in the sub-250 nm wavelength range. One of the main reasons for...

scholarly journals Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs

RSC Advances ◽  
2017 ◽  
Vol 7 (87) ◽  
pp. 55157-55162 ◽  
Author(s):  
Jinjian Zheng ◽  
Jinchai Li ◽  
Zhibai Zhong ◽  
Wei Lin ◽  
Li Chen ◽  
...  
Keyword(s):  
Valence Band ◽  
Light Extraction ◽  
Interband Transitions ◽  
Light Emitting ◽  
Al Content ◽  
Induced Stress ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes

The light extraction from AlGaN deep ultraviolet light-emitting diodes (UV LEDs) is known to be limited by the fundamental valence band crossover issue.

scholarly journals Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Shiqiang Lu ◽  
Zongyan Luo ◽  
Jinchai Li ◽  
Wei Lin ◽  
Hangyang Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Tensile Strain ◽  
Light Emitting Diode ◽  
Formation Enthalpy ◽  
Local Variation ◽  
Multiple Quantum ◽  
Al Content ◽  
Deep Ultraviolet ◽  
High Al Content

AbstractA systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations. The strain-induced microscale compositional pulling leads to an asymmetrical feature of emission spectra and local variation in emission energy of AlGaN MQWs. Because of a stronger three-dimensional carrier localization, the area of Ga segregation shows a higher emission efficiency compared with the intrinsic area of MQWs, which is benefit for fabricating efficient AlGaN-based deep-ultraviolet light-emitting diode.

Dislocation reduction in high Al-content AlGaN films for deep ultraviolet light emitting diodes

2011 ◽  
Vol 208 (7) ◽  
pp. 1501-1503 ◽  
Author(s):  
Iftikhar Ahmad ◽  
Balakrishnan Krishnan ◽  
Bin Zhang ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Al Content ◽  
Dislocation Reduction ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jinchai Li ◽  
Na Gao ◽  
Duanjun Cai ◽  
Wei Lin ◽  
Kai Huang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Virus Transmission ◽  
Quantum Structures ◽  
Light Sources ◽  
Light Emitting ◽  
Al Content ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Ultraviolet Light Emitting Diodes

AbstractAs demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

High efficiency AlGaInN-based light emitting diode in the 360–380 nm wavelength range

2003 ◽  
Vol 200 (1) ◽  
pp. 102-105 ◽  
Author(s):  
Hisao Sato ◽  
Hong-Xing Wang ◽  
Daisuke Sato ◽  
Ryohei Takaki ◽  
Naoki Wada ◽  
...  
Keyword(s):  
Wavelength Range ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Light Emitting

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

2008 ◽  
Vol 20 (16) ◽  
pp. 3100-3104 ◽  
Author(s):  
Beak-Hyun Kim ◽  
Chang-Hee Cho ◽  
Jin-Soo Mun ◽  
Min-Ki Kwon ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Surface Plasmons ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Localized Surface Plasmons ◽  
Light Emitting ◽  
Silicon Quantum Dot
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