Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

Vapour Deposition ◽

Chemical Vapour ◽

Zinc Complexes ◽

Diethyl Zinc ◽

Solution Dynamics ◽

Synthesis Solution

Ethyl and amide zinc thioureides [L1ZnEt]2 (1), [L1*ZnEt]2 (2) and [L1Zn(N(SiMe3)2)]2 (3) have been synthesised from the equimolar reaction of thiourea ligands (HL1 = iPrN(H)CSNMe2 and HL1* = PhN(H)CSNMe2) with diethyl zinc and zinc...

ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION (APMOCVD) FOR THE GROWTH OF ZnSe EPILAYERS ON (100)-GaAs SUBSTRATES USING DIETHYL-ZINC (DEZn) AND HYDROGEN SELENIDE (H2Se)

10.1051/jp4:19912114 ◽

1991 ◽

Vol 02 (C2) ◽

pp. C2-945-C2-951

Author(s):

A. BOUMAZA ◽

H. M. YATES ◽

L. JAMES ◽

I. A. PATTERSON ◽

D. J. COLE-HAMILTON ◽

...

Keyword(s):

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Hydrogen Selenide ◽

Diethyl Zinc ◽

Gaas Substrates ◽

Metal Organic

Homogeneous nucleation during crystallization of amorphous silicon produced by low-pressure chemical vapour deposition

Philosophical Magazine A ◽

10.1080/01418610110067734 ◽

2002 ◽

Vol 82 (1) ◽

pp. 137-165 ◽

Cited By ~ 1

Author(s):

A. Q. He ◽

A. H. Heuer ◽

H. Kahn

Keyword(s):

Amorphous Silicon ◽

Homogeneous Nucleation ◽

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Pressure Chemical

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

10.1051/jp4:1999849 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-395-Pr8-402 ◽

Cited By ~ 2

Author(s):

B. Armas ◽

M. de Icaza Herrera ◽

C. Combescure ◽

F. Sibieude ◽

D. Thenegal

Keyword(s):

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Cold Wall ◽

Pressure Chemical ◽

Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

10.1051/jp4:1999846 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-373-Pr8-380 ◽

Cited By ~ 1

Author(s):

P. Sourdiaucourt ◽

A. Derré ◽

P. Delhaès ◽

P. David

Keyword(s):

Vapour Deposition ◽

Chemical Vapour ◽

Hafnium Carbide ◽

Experimental Conditions

Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane

10.1051/jp4:2001324 ◽

2001 ◽

Vol 11 (PR3) ◽

pp. Pr3-189-Pr3-196

Author(s):

L. Zambov ◽

B. Caussat ◽

R. Boubeker ◽

J.-P. Couderc

Keyword(s):

Vapour Deposition ◽

Film Formation ◽

Chemical Vapour ◽

Low Pressure ◽

Pressure Chemical ◽

Kinetics Of

Potentials of laser chemical vapour deposition processes in the high temperature corrosion protection of automotive parts

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5059100 ◽

1996 ◽

Author(s):

J. Pou ◽

P. González ◽

E. García ◽

J. Serra ◽

B. León ◽

...

Keyword(s):

High Temperature ◽

Corrosion Protection ◽

Vapour Deposition ◽

Chemical Vapour ◽

High Temperature Corrosion ◽

Automotive Parts ◽

Deposition Processes

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

10.26434/chemrxiv.11910735.v2 ◽

2020 ◽

Author(s):

Polla Rouf ◽

Pitsiri Sukkaew ◽

Lars Ojamäe ◽

Henrik Pedersen

Keyword(s):

Vapour Deposition ◽

Chemical Vapour ◽

Aluminium Nitride ◽

Methyl Groups ◽

Time Resolved ◽

Thermally Induced ◽

Light Emitting ◽

Carbon Impurities ◽

Wide Range

Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH3 while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H2, N2 or Ar between the TMA and NH3 pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH3 prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse.