scholarly journals Polymer source-gated transistors with low saturation voltage

Author(s):  
Stamatis Georgakopoulos ◽  
Radu Sporea ◽  
Maxim Shkunov

A type of injection-limited transistor is demonstrated with a conjugated polymer semiconductor and fluoropolymer insulator. The Source-Gated Transistor (SGT) is based on a source Schottky barrier, the effective height of...

2019 ◽  
Vol 5 (5) ◽  
pp. eaav2336 ◽  
Author(s):  
A. E. London ◽  
H. Chen ◽  
M. A. Sabuj ◽  
J. Tropp ◽  
M. Saghayezhian ◽  
...  

Interest in high-spin organic materials is driven by opportunities to enable far-reaching fundamental science and develop technologies that integrate light element spin, magnetic, and quantum functionalities. Although extensively studied, the intrinsic instability of these materials complicates synthesis and precludes an understanding of how fundamental properties associated with the nature of the chemical bond and electron pairing in organic materials systems manifest in practical applications. Here, we demonstrate a conjugated polymer semiconductor, based on alternating cyclopentadithiophene and thiadiazoloquinoxaline units, that is a ground-state triplet in its neutral form. Electron paramagnetic resonance and magnetic susceptibility measurements are consistent with a high-to-low spin energy gap of 9.30 × 10−3 kcal mol−1. The strongly correlated electronic structure, very narrow bandgap, intramolecular ferromagnetic coupling, high electrical conductivity, solution processability, and robust stability open access to a broad variety of technologically relevant applications once thought of as beyond the current scope of organic semiconductors.


2017 ◽  
Vol 123 (12) ◽  
Author(s):  
L. S. Cardoso ◽  
G. E. Gonçalves ◽  
D. H. F. Kanda ◽  
R. F. Bianchi ◽  
H. N. Nagashima

2018 ◽  
Vol 6 (28) ◽  
pp. 13644-13651 ◽  
Author(s):  
Qi Xiao ◽  
Fei Wu ◽  
MengMeng Han ◽  
Zhen Li ◽  
LinNa Zhu ◽  
...  

A new squaraine-based 2D conjugated polymer was developed as the donor material in polymer solar cells and dopant-free hole transporting material in inverted perovskite solar cells, reaching efficiencies of 6.35% and 18.29%, respectively.


2011 ◽  
Vol 21 (5) ◽  
pp. 932-940 ◽  
Author(s):  
Mi Jung Lee ◽  
Dhritiman Gupta ◽  
Ni Zhao ◽  
Martin Heeney ◽  
Iain McCulloch ◽  
...  

2019 ◽  
Vol 31 (12) ◽  
pp. 2846-2854
Author(s):  
E. Shoba ◽  
N. Pasupathy ◽  
P. Thirunavukkarasu ◽  
J. Chandrasekaran ◽  
G. Parthasarathy

The interfacial layer of pristine polyaniline (PANI) polymer was prepared using chemical oxidative method with 0.2 M concentration formerly, aniline hydrochloride was oxidized with ammonium peroxydisulfate 0.25 M in aqueous medium at 1-2 ºC next to aniline, stirring time and polymerization temperature are considerable causing parameters of polymerization reaction, harmoniously metal polymer- semiconductor (MPS) constructions of Cu/PANI/n-Si Schottky barrier diodes with different acids (HCl, acetic acid, nitric acid and sulfuric acid) was fabricated. The structural analyses of XRD sizes of the elements revealed that the crystal structure of distortion and converted into amorphous nature and SEM revealed that the morphology of pristine PANI powders. The FT-IR spectra confirmed that ammonium peroxydisulfate with pristine PANI along with band formation. The optical property of PANI was analyzed using UV-vis spectra and deliberate with minimum band gap 3.1 eV by means of HCl. The electrical property I -V temperature ranges 30 to 120 ºC represents that the maximum average conductivity obtains as 0.70 × 10-2 S/cm for 0.2 M HCl. The lowest ideality factor (n) and minimum barrier height (ΦB) values were achieved for HCl of Cu/PANI/n-Si Schottky barrier diode (SBDs) under the explanation disorder.


2016 ◽  
Vol 221 ◽  
pp. 169-175 ◽  
Author(s):  
Lih Wei Lim ◽  
Fakhra Aziz ◽  
Fahmi F. Muhammad ◽  
Azzuliani Supangat ◽  
Khaulah Sulaiman

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