An improved gate driver for power MOSFETs using a cascode configuration

7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014) ◽

10.1049/cp.2014.0303 ◽

2014 ◽

Author(s):

M.A.H. Broadmeadow ◽

G.F. Ledwich ◽

G.R. Walker

Keyword(s):

Power Mosfets ◽

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Mitigating Drain Source Voltage Oscillation with Low Switching Losses for SiC Power MOSFETs Using FPGA-Controlled Active Gate Driver

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) ◽

10.23919/epe20ecceeurope43536.2020.9215813 ◽

2020 ◽

Author(s):

Zheming Li ◽

Robert W. Maier ◽

Mark-M. Bakran

Keyword(s):

Power Mosfets ◽

Voltage Oscillation ◽

Switching Losses ◽

Gate Driver ◽

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Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs

2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) ◽

10.23919/ipec.2018.8507449 ◽

2018 ◽

Author(s):

Takafumi Okuda ◽

Takashi Hikihara

Keyword(s):

Power Mosfets ◽

Gate Driver ◽

Gan Hemts ◽

Driving Capability

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A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452261 ◽

2021 ◽

Author(s):

Mengqi Wang ◽

Wei Jia Zhang ◽

Jingyuan Liang ◽

Wen Tao Cui ◽

Wai Tung Ng ◽

...

Keyword(s):

Power Mosfets ◽

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An Experimental Study of Temperature Influence for A Gate Driver and Power MOSFETS Used in A 48v Transmission Control Unit for A BLDC Actuator Control

2019 International Conference on ENERGY and ENVIRONMENT (CIEM) ◽

10.1109/ciem46456.2019.8937630 ◽

2019 ◽

Author(s):

Diana-Raluca Biba ◽

Ciprian Sorandaru ◽

Codruta Ancuti ◽

Sorin Musuroi

Keyword(s):

Experimental Study ◽

Control Unit ◽

Temperature Influence ◽

Transmission Control ◽

Power Mosfets ◽

Gate Driver ◽

Actuator Control

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Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2017.06.082 ◽

2017 ◽

Vol 76-77 ◽

pp. 470-474 ◽

Author(s):

J. Ortiz Gonzalez ◽

O. Alatise

Keyword(s):

Condition Monitoring ◽

Temperature Sensitive ◽

Electrical Parameters ◽

Power Mosfets ◽

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Design trends in smart gate driver ICs for power MOSFETs and IGBTs

2017 IEEE 12th International Conference on ASIC (ASICON) ◽

10.1109/asicon.2017.8252424 ◽

2017 ◽

Author(s):

J. Chen ◽

W. T. Ng

Keyword(s):

Power Mosfets ◽

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Design and characterization of an integrated CMOS gate driver for vertical power MOSFETs

2010 IEEE Energy Conversion Congress and Exposition ◽

10.1109/ecce.2010.5617824 ◽

2010 ◽

Author(s):

Timothe Simonot ◽

Nicolas Rouger ◽

Jean-Christophe Crebier

Keyword(s):

Power Mosfets ◽

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Gate Driver for SiC Power MOSFETs Using Soft-Switching Technique

Journal of Electrical Engineering and Technology ◽

10.1007/s42835-019-00117-w ◽

2019 ◽

Vol 14 (3) ◽

pp. 1311-1319 ◽

Author(s):

Kihyun Kim ◽

Hyoung-Woo Kim ◽

Kyoungho Lee ◽

Jusung Park

Keyword(s):

Soft Switching ◽

Power Mosfets ◽

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High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec.2017.7930806 ◽

2017 ◽

Author(s):

Jorge Garcia ◽

Emre Gurpinar ◽

Alberto Castellazzi

Keyword(s):

High Frequency ◽

Power Mosfets ◽

Gate Driver ◽

Self Powered ◽

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MHz-switching-speed current-source gate driver for SiC power MOSFETs

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) ◽

10.23919/epe17ecceeurope.2017.8099288 ◽

2017 ◽

Author(s):

Sho Inamori ◽

Jun Furuta ◽

Kazutoshi Kobayashi

Keyword(s):

Current Source ◽

Switching Speed ◽

Power Mosfets ◽

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