Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

2011 ◽  
Vol 47 (16) ◽  
pp. 930 ◽  
Author(s):  
F. Xie ◽  
H. Lu ◽  
D.J. Chen ◽  
P. Han ◽  
R. Zhang ◽  
...  
Keyword(s):  
Dark Current ◽  
Large Area ◽  
Solar Blind ◽  
Msm Photodetectors

Improvement of Dark Current Using InP/InGaAsP Transition Layer in Large-Area InGaAs MSM Photodetectors

2004 ◽  
Vol 51 (3) ◽  
pp. 351-356 ◽  
Author(s):  
J. Kim ◽  
W.B. Johnson ◽  
S. Kanakaraju ◽  
L.C. Calhoun ◽  
C.H. Lee
Keyword(s):  
Transition Layer ◽  
Dark Current ◽  
Large Area ◽  
Msm Photodetectors

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

2018 ◽  
Vol 16 (6) ◽  
pp. 060401 ◽  
Author(s):  
Xingye Zhou Xingye Zhou ◽  
Jia Li Jia Li ◽  
Weili Lu Weili Lu ◽  
Yuangang Wang Yuangang Wang ◽  
Xubo Song Xubo Song ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Large Area ◽  
Ultraviolet Detection ◽  
Visible Blind

ITO/a-SiNx:H/a-Si:H Photodiode with Enhanced Photosensitivity and Reduced Leakage Current Using Polycrystalline ITO Deposited at Room Temperature

2000 ◽  
Vol 609 ◽  
Author(s):  
S. Tao ◽  
Q. Ma ◽  
D. Striakhilev ◽  
A. Nathan
Keyword(s):  
Leakage Current ◽  
Dark Current ◽  
Room Temperature ◽  
Dynamic Range ◽  
Transport Model ◽  
Measurement Data ◽  
Mis Structure ◽  
Defect States ◽  
Large Area ◽  
Density Of Defect States

ABSTRACTWe report an ITO/a-SiNx:H/a-Si:H MIS photodiode structure based on room temperature deposition of optically transparent polycrystalline ITO for applications in large area optical and x-ray imaging. The photodiode structure exhibits device characteristics with reduced leakage current and enhanced photosensitivity giving rise to a hundred-fold improvement in dynamic range. This notable improvement in performance is believed to be due to the reduced diffusion of oxygen from the ITO to the a-Si:H layer, and thus reducing the density of defect states inside the a-Si:H layer. The behavior of photo and dark current is consistent with an elaborate transport model for the Schottky barrier. The model agrees reasonably well with measurement data for the dark current and provides a consistent picture in terms of the photo current behavior in the MIS structure, where the insulating layer serves to reduce the oxygen diffusion.

Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

2018 ◽  
Vol 498 ◽  
pp. 35-42 ◽  
Author(s):  
Shashwat Rathkanthiwar ◽  
Anisha Kalra ◽  
Rangarajan Muralidharan ◽  
Digbijoy N. Nath ◽  
Srinivasan Raghavan
Keyword(s):  
Screw Dislocation ◽  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Solar Blind

scholarly journals Organic Photodetectors and their Application in Large Area and Flexible Image Sensors: The Role of Dark Current

2019 ◽  
Vol 30 (20) ◽  
pp. 1904205 ◽  
Author(s):  
Giulio Simone ◽  
Matthew J. Dyson ◽  
Stefan C. J. Meskers ◽  
René A. J. Janssen ◽  
Gerwin H. Gelinck
Keyword(s):  
Dark Current ◽  
Image Sensors ◽  
Large Area ◽  
Organic Photodetectors

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

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