Non-lithographically microfabricated capacitive pressure sensor for biomedical applications

2011 ◽  
Vol 47 (18) ◽  
pp. 1015 ◽  
Author(s):  
D. Brox ◽  
A.R. Mohammadi ◽  
K. Takahata
2007 ◽  
Vol 134 (2) ◽  
pp. 382-388 ◽  
Author(s):  
Chia-Chu Chiang ◽  
Chou-Ching K. Lin ◽  
Ming-Shuang Ju

2020 ◽  
Vol 8 (4) ◽  
pp. 296-307
Author(s):  
Konstantin Krestovnikov ◽  
Aleksei Erashov ◽  
Аleksandr Bykov

This paper presents development of pressure sensor array with capacitance-type unit sensors, with scalable number of cells. Different assemblies of unit pressure sensors and their arrays were considered, their characteristics and fabrication methods were investigated. The structure of primary pressure transducer (PPT) array was presented; its operating principle of array was illustrated, calculated reference ratios were derived. The interface circuit, allowing to transform the changes in the primary transducer capacitance into voltage level variations, was proposed. A prototype sensor was implemented; the dependency of output signal power from the applied force was empirically obtained. In the range under 30 N it exhibited a linear pattern. The sensitivity of the array cells to the applied pressure is in the range 134.56..160.35. The measured drift of the output signals from the array cells after 10,000 loading cycles was 1.39%. For developed prototype of the pressure sensor array, based on the experimental data, the average signal-to-noise ratio over the cells was calculated, and equaled 63.47 dB. The proposed prototype was fabricated of easily available materials. It is relatively inexpensive and requires no fine-tuning of each individual cell. Capacitance-type operation type, compared to piezoresistive one, ensures greater stability of the output signal. The scalability and adjustability of cell parameters are achieved with layered sensor structure. The pressure sensor array, presented in this paper, can be utilized in various robotic systems.


2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.


2021 ◽  
pp. 1-1
Author(s):  
Valliammai Palaniappan ◽  
Masoud Panahi ◽  
Dinesh Maddipatla ◽  
Xingzhe Zhang ◽  
Simin Masihi ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document