Analysis and design of an ultra-wideband microstrip-to-slotline transition on a low permittivity substrate is presented. Cross-sectional structures along the proposed transition are analyzed using conformal mapping assuming quasi-TEM modes, attaining one analytical line impedance formula with varying design parameters. Although the slotline is a non-TEM transmission line, the transitional structures are configured to have quasi-TEM modes before forming into the slotline. The line impedance is optimally tapered using the Klopfenstein taper, and the electric field shapes are smoothly transformed from microstrip line to slotline. The analytical formula is accurate within 5% difference, and the final transition configuration can be designed without parameter tuning. The implemented microstrip-to-slotline transition possesses insertion loss of less than 1.5 dB per transition and return loss of more than 10 dB from 4.4 to over 40 GHz.
Design of an Ultra-Wideband Microstrip-to-Slotline Transition on Low-Permittivity Substrate
