About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

FADING CORRECTION OF NaCl(I) TLD

2006 ◽  
Vol 20 (09) ◽  
pp. 1077-1086
Author(s):  
B. ARUNKUMAR SHARMA ◽  
R. K. GARTIA ◽  
S. NABADWIP SINGH
Keyword(s):  
Activation Energy ◽  
Theoretical Prediction ◽  
Glow Curve ◽  
Thermal Activation ◽  
Room Temperature ◽  
Storage Period ◽  
Frequency Factor ◽  
Data Acquisition System ◽  
Thermal Activation Energy ◽  
State Of Art

The prediction of fading for the glow peaks relevant to dosimetry of iodised salt has been made using the values of the trapping parameters, namely the thermal activation energy (E), frequency factor (s) and the order of kinetic (b). This theoretical prediction has been checked with experimentally observed glow curves recorded after storage period of 2, 5, 10, 165, 375 and 790 days at room temperature (~21°C). Excellent agreement has been observed between the experimental and theoretical glow curves. This has been possible because of reliable retrieval of the trapping parameters by the use of Computerised Glow Curve Deconvolution (CGCD) as well as state-of-art of data acquisition system. The concept developed in the present paper in principle may be applied to any TLD.

Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

2019 ◽  
Vol 963 ◽  
pp. 416-419
Author(s):  
Roberta Nipoti ◽  
Maria Concetta Canino ◽  
Sergio Sapienza ◽  
Michele Bellettato ◽  
Giovanna Sozzi ◽  
...  
Keyword(s):  
Activation Energy ◽  
Annealing Temperature ◽  
Activation Energies ◽  
Electrical Activation ◽  
Substitutional Site ◽  
Annealing Temperatures ◽  
Implantation Temperature ◽  
Exponential Trend ◽  
Post Implantation ◽  
Ion Implanted

The activation energy for the electrical activation of 1x1019 cm-3 and of 1x1020 cm-3 ion implanted Al in 4H-SiC has been estimated. Ion implantation temperature and dose rate were in the range 430-500°C and around 1011 cm2s-1, respectively. Post implantation annealing temperatures varied between 1500 °C and 1950 °C. The annealing time per each annealing temperature was sufficiently long that the sheet resistance of the implanted layer could be equal to the stationary value at the applied annealing temperature. The Arrhenius plots of the room temperature sheet resistances with respect to the post implantation annealing temperatures featured an exponential trend for both the implanted Al concentrations. The activation energies of these plots are the activation energy for placing an implanted Al atom in a substitutional site, i.e. the electrical activation energy. Activation energies around 1 eV, equal within errors for the two implanted Al concentrations, were found.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

Interaction of Copper Film with Silicides

1990 ◽  
Vol 181 ◽  
Author(s):  
Yow-Tzong Shy ◽  
Shyam P. Murarka ◽  
Carlton L. Shepard ◽  
William A. Lanford
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Room Temperature ◽  
Copper Film ◽  
Furnace Annealing ◽  
Rutherford Back Scattering ◽  
Annealing Temperatures ◽  
Back Scattering ◽  
The Stability ◽  
Stable Structures

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 343-346 ◽  
Author(s):  
M. Obernhofer ◽  
Michael Krieger ◽  
Frank Schmid ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Hall Effect ◽  
Structural Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Electrical Activation ◽  
Implantation Damage ◽  
Aluminum Ions

Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.

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