Wide-band body wearable antennas

2008 ◽  
Author(s):  
J.C.G. Matthews ◽  
B.P. Pirollo ◽  
A.J. Tyler ◽  
G. Pettit
Keyword(s):  
Wide Band ◽  
Wearable Antennas

scholarly journals Design and analysis of key shaped wearable textile antenna

2018 ◽  
Vol 7 (2.12) ◽  
pp. 219
Author(s):  
Nausheen Bano ◽  
Vinod Kumar Singh ◽  
Akash Kumar Bhoi ◽  
Sanjeev Sharma
Keyword(s):  
Reflection Coefficient ◽  
Wide Band ◽  
High Gain ◽  
Wearable Antennas ◽  
Textile Antenna

The proposed antenna is designed to achieve high gain and wide band with partial ground. In this paper, textile wearable antennas work-ing in the craved range of frequency are fabricated and demonstrated. Simulated and measured reflection coefficient, directivity and radi-ation characteristics have been studied. CST is used for design & simulation of existing antenna with design frequency 3GHz.  

Seven-colour photometry at the Geneva Observatory

1966 ◽  
Vol 24 ◽  
pp. 262-266 ◽  
Author(s):  
M. Golay
Keyword(s):  
Wide Band ◽  
Electric System ◽  
Band Type

During the last 5 years, we have developed a seven-colour photometry at the Geneva Observatory. Our multicolour photo-electric system is of a wide-band type; the bandwidth being about 500Å for four filters. The three others are similar to theUBVsystem. In Table 1 we give the filter combinations used in our photometry (1).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Wide-band II-VI semiconductors and the prospects of their application

1974 ◽  
Vol 113 (5) ◽  
pp. 129 ◽  
Author(s):  
A.N. Georgobiani
Keyword(s):  
Wide Band

The Realization and Analysis of Capacitance Self Tracing (CST) Method for Wide Band Response Measurement of Carrier Type Dynamic Strain Amplifier

2011 ◽  
Vol 131 (2) ◽  
pp. 343-348 ◽  
Author(s):  
Shinji Kubodera ◽  
Tsutomu Tanzawa ◽  
Masayuki Morisawa ◽  
Noriaki Kiyohiro
Keyword(s):  
Wide Band ◽  
Dynamic Strain ◽  
Response Measurement

Wide-Band Dispersion Compensation for PCF with Uniform Air Hole Structure

2009 ◽  
Vol E92-B (9) ◽  
pp. 2951-2953
Author(s):  
Kazuhide NAKAJIMA ◽  
Takashi MATSUI ◽  
Chisato FUKAI
Keyword(s):  
Dispersion Compensation ◽  
Wide Band ◽  
Band Dispersion ◽  
Hole Structure ◽  
Air Hole
Sign in / Sign up

Export Citation Format

Share Document