High mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays

ABSTRACTA new mechanism which describes how misfit dislocations in epitaxial layers multiply is presented. This work demonstrates how a single threading dislocation can give rise to an array of dislocation sources, where each source generates a single dislocation loop perpendicular to the primary misfit dislocation. As a threading dislocation with pure screw character glides through an epilayer, certain processes occur which lead to the production of a single dislocation half-loop, and the regeneration of the original threading dislocation. The regenerated threading dislocation continues to propagate on its primary glide plane, which allows the process to repeat itself at some later time. The result of this sequential process is an array of half-loops perpendicular to the primary misfit dislocation. The shape and symmetry of the arrays also contains information regarding how the mechanism operates. The proposed mechanism is related to misfit dislocation arrays in a single Si0.87Ge0.13 layer on Si(001).

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Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates

Eastern-European Journal of Enterprise Technologies ◽

10.15587/1729-4061.2017.104563 ◽

2017 ◽

Vol 3 (5 (87)) ◽

pp. 54-61 ◽

Cited By ~ 1

Author(s):

Stepan Novosyadlyj ◽

Bogdan Dzundza ◽

Volodymyr Gryga ◽

Svyatoslav Novosyadlyj ◽

Mykhailo Kotyk ◽

...

Keyword(s):

Gallium Arsenide ◽

Silicon Substrates

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Selective‐area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air

Applied Physics Letters ◽

10.1063/1.103869 ◽

1990 ◽

Vol 57 (23) ◽

pp. 2437-2439 ◽

Cited By ~ 14

Author(s):

J. A. Dagata ◽

W. Tseng ◽

J. Bennett ◽

C. J. Evans ◽

J. Schneir ◽

...

Keyword(s):

Gallium Arsenide ◽

Epitaxial Growth ◽

Scanning Tunneling Microscope ◽

Scanning Tunneling ◽

Silicon Substrates ◽

Tunneling Microscope ◽

Selective Area

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AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE

Canadian Journal of Physics ◽

10.1139/p66-078 ◽

1966 ◽

Vol 44 (5) ◽

pp. 941-948 ◽

Cited By ~ 11

Author(s):

J. Basinski

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Hall Effect ◽

Conduction Band ◽

High Mobility ◽

Theoretical Expression ◽

Donor Level ◽

Hall Effect Measurements

The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.

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