High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays

2014 ◽  
Author(s):  
Darryl Shima ◽  
Ganesh Balakrishnan
Keyword(s):  
Gallium Arsenide ◽  
Misfit Dislocation ◽  
High Mobility ◽  
Silicon Substrates ◽  
Dislocation Arrays

Morphology- and Orientation-Controlled Gallium Arsenide Nanowires on Silicon Substrates

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 39-44 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Jong-In Song ◽  
Tae-Wook Kim ◽  
Dong-Seok Leem ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Substrates

Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing

1993 ◽  
Vol 63 (16) ◽  
pp. 2234-2236 ◽  
Author(s):  
Y. Chen ◽  
Z. Liliental‐Weber ◽  
J. Washburn ◽  
J. F. Klem ◽  
J. Y. Tsao
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Arrays

Enhancement mode high mobility n-MOSFET on gallium arsenide substrate

2007 ◽  
Vol 4 (5) ◽  
pp. 1671-1674 ◽  
Author(s):  
K. Rajagopalan ◽  
J. Abrokwah ◽  
R. Droopad ◽  
M. Passlack
Keyword(s):  
Gallium Arsenide ◽  
High Mobility ◽  
Enhancement Mode

A Multiplication Mechanism for Misfit Dislocations

1992 ◽  
Vol 263 ◽  
Author(s):  
Michael A. Capano
Keyword(s):  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Sequential Process ◽  
Single Dislocation ◽  
Dislocation Arrays ◽  
Half Loop ◽  
Dislocation Sources

ABSTRACTA new mechanism which describes how misfit dislocations in epitaxial layers multiply is presented. This work demonstrates how a single threading dislocation can give rise to an array of dislocation sources, where each source generates a single dislocation loop perpendicular to the primary misfit dislocation. As a threading dislocation with pure screw character glides through an epilayer, certain processes occur which lead to the production of a single dislocation half-loop, and the regeneration of the original threading dislocation. The regenerated threading dislocation continues to propagate on its primary glide plane, which allows the process to repeat itself at some later time. The result of this sequential process is an array of half-loops perpendicular to the primary misfit dislocation. The shape and symmetry of the arrays also contains information regarding how the mechanism operates. The proposed mechanism is related to misfit dislocation arrays in a single Si0.87Ge0.13 layer on Si(001).

scholarly journals Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates

2017 ◽  
Vol 3 (5 (87)) ◽  
pp. 54-61 ◽  
Author(s):  
Stepan Novosyadlyj ◽  
Bogdan Dzundza ◽  
Volodymyr Gryga ◽  
Svyatoslav Novosyadlyj ◽  
Mykhailo Kotyk ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Substrates

Selective‐area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air

1990 ◽  
Vol 57 (23) ◽  
pp. 2437-2439 ◽  
Author(s):  
J. A. Dagata ◽  
W. Tseng ◽  
J. Bennett ◽  
C. J. Evans ◽  
J. Schneir ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscope ◽  
Selective Area

AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE

1966 ◽  
Vol 44 (5) ◽  
pp. 941-948 ◽  
Author(s):  
J. Basinski
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Hall Effect ◽  
Conduction Band ◽  
High Mobility ◽  
Theoretical Expression ◽  
Donor Level ◽  
Hall Effect Measurements

The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.

scholarly journals Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Zhong Wan ◽  
Aleksandr Kazakov ◽  
Michael J. Manfra ◽  
Loren N. Pfeiffer ◽  
Ken W. West ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electron Gas ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas
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