scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

Preparation and Characterization of PbTiO3 and PbZrO3 Films from Oxide Multilayers

1991 ◽  
Vol 243 ◽  
Author(s):  
Chen C. Li ◽  
Seshu B. Desu
Keyword(s):  
Beam Energy ◽  
Ion Beam ◽  
Deposition Process ◽  
Deposition Technique ◽  
Post Deposition Annealing ◽  
Annealing Temperatures ◽  
Excellent Control ◽  
Oriented Phase ◽  
Post Deposition

AbstractPbTiO3 and PbZrO3 thin films were successfully fabricated from oxide multilayers by employing ion-assisted deposition process (IAD). Excellent control of the film thickness and composition were achieved by using the multilayer deposition technique. A (001)-oriented phase was found in the PbTiO3 films at 550°C with 300 and 600eV Ar+ ion bombardment. Very fine equiaxial grain size of 0.2μm was seen in the IAD deposited PbTiO3 films, which is independent of the Ar+ ion beam energy. The optical properties of the PbTiO3 films were studied for different energies of Ar+ ion beam and for various post-deposition annealing temperatures. PbTiO3 films with packing density of near unity (≅0.99) were obtained at temperatures as low as 600°C.

scholarly journals Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge)/Aluminium Oxide (Al2O3)

2019 ◽  
Vol 48 (6) ◽  
pp. 1195-1199 ◽  
Author(s):  
Siti Kudnie Sahari ◽  
Nik Amni Fathi Nik Zaini Fathi ◽  
Azrul Azlan Hamzah ◽  
Norsuzailina Mohamed Sutan ◽  
Zaidi Embong ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Aluminium Oxide ◽  
Post Deposition Annealing ◽  
Annealing Temperatures ◽  
Post Deposition

Microstructural evolution and magnetic properties in Fe50Pd50 sputtered thin films submitted to post-deposition annealing

2014 ◽  
Vol 615 ◽  
pp. S236-S241 ◽  
Author(s):  
P. Tiberto ◽  
G. Barrera ◽  
F. Celegato ◽  
M. Coisson ◽  
E.S. Olivetti ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Microstructural Evolution ◽  
Post Deposition Annealing ◽  
Post Deposition

Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated silicon nitride thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (81) ◽  
pp. 77440-77451 ◽  
Author(s):  
M. A. Serrano-Núñez ◽  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Deposition Temperature ◽  
Post Deposition Annealing ◽  
Silicon Quantum Dots ◽  
Film Composition ◽  
Annealing Temperatures ◽  
Post Deposition

The photoluminescence (PL) evolution of SiQDs respect deposition and annealing temperatures is studied in a combined manner. The PL identified changes are associated to changes in thin film composition. 150 °C is identified as an important threshold.

The Effects of Substrate Preheating and Post-Deposition Annealing on CrMn/CoCrPt/CrMn/NiAI Films

1998 ◽  
Vol 517 ◽  
Author(s):  
Jie Zou ◽  
David E. Laughlin ◽  
David N. Lambeth
Keyword(s):  
Magnetic Properties ◽  
Grain Boundaries ◽  
Intermediate Layer ◽  
Exchange Coupling ◽  
Deposition Temperature ◽  
Magnetic Layer ◽  
Alloy Film ◽  
Post Deposition Annealing ◽  
Substrate Preheating ◽  
Post Deposition

AbstractIn this study, we examine the effects of introducing CrMn as an intermediate layer between the NiAI underlayer and the CoCrPt magnetic layer, and as an overlayer on top of the Co-alloy film. The effects of deposition temperature and post-deposition annealing on the texture and magnetic properties were studied. Post-deposition annealing effectively lowered the exchange coupling between grains, increased the coercivity by 38%, up to 4600 Oe, and moderately decreased the Ms by 15%. Interlayer diffusion of CrMn into the CoCrPt grain boundaries is believed to cause the change in magnetic properties. It was also found that granular exchange coupling seems to be correlated to the Co-alloy in-plane texture.

Pressure Assisted Crystallization of MnAl Thin Films

2001 ◽  
Vol 695 ◽  
Author(s):  
Gregory A. Fischer ◽  
M. Lea Rudee ◽  
Vitali F. Nesterenko ◽  
Sastry Indrakanti
Keyword(s):  
Magnetic Properties ◽  
Vacuum Annealing ◽  
Degree Of Crystallinity ◽  
Post Deposition Annealing ◽  
Dc Sputtering ◽  
The Degree Of Crystallinity ◽  
Deposited Films ◽  
Equal Thickness ◽  
Post Deposition ◽  
Better Than

ABSTRACTThe effect of hot isostatic pressure processing (HIP) on MnAl films has been compared to vacuum annealing for the purpose of obtaining substantial amounts of tau phase MnAl in films under 200 nm. Films were deposited by dc sputtering from both MnAlNiC an MnAl targets. As-deposited films were nearly amorphous. Post deposition annealing in vacuum produced only small amounts of the ferromagnetic tau-phase in films thinner than 200 nm.In all instances, regardless of substrate and sputtering target, the use of HIP in place of vacuum annealing increased the degree of crystallinity of the samples when compared to those annealed in vacuum. For the 100 nm samples deposited from the MnAlNiC target, these changes in crystallinity were accompanied by changes in the M-H loops of the samples. MnAlNiC HIP samples had improved magnetic properties compared to those of equal thickness annealed in vacuum. The 100 nm HIP sample sputtered from the MnAl target also showed an increase in moment, though the changes were not as dramatic as those seen in the samples sputtered from the MnAlNiC target.The 50 nm films from both targets also showed a change in crystallinity when compared to vacuum annealed samples. These films, unlike the 100 nm films, had ferromagnetic properties that were no better than those of the vacuum annealed samples. This suggests that while the 2 kbar of pressure used in this study assists in the formation of tau-phase in 100 nm films, the appropriate pressure for forming tau-phase in 50 nm films is yet to be determined.

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