scholarly journals Research on efficiency optimisation of DAB converters considering current stress and soft‐switching

2021 ◽  
Author(s):  
Jinhui Zeng ◽  
Yao Rao ◽  
Zheng Lan ◽  
Dong He ◽  
Xueping Yu ◽  
...  

Energies ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6444
Author(s):  
Jinhui Zeng ◽  
Yao Rao ◽  
Zheng Lan ◽  
Dong He ◽  
Fan Xiao ◽  
...  

To solve the problems of large current stress, difficult soft-switching of all switches, and slow dynamic response of dual active bridge converters, a multi-objective unified optimal control strategy based on triple-phase-shift control was proposed. The forward power flow global modes of triple-phase-shift control were analyzed, and three high-efficiency modes were selected to establish the analytical models of current stress and soft-switching. Combined with these models, the optimal solutions in different modes were derived by using the cost function-optimization equation to overcome the limitation of the Lagrange multiplier method, such that the DAB converter achieved the minimum current stress, and all switches operated in the soft-switching state over the entire power range. At the same time, the virtual power component was introduced in the phase-shift ratio combination, which improved the dynamic response of output voltage under the input voltage or load steps changed by power control. The theoretical analysis and experimental results show that the proposed control strategy can optimize the performance of the DAB converter from three aspects, such as current stress, soft-switching, and dynamic response, which achieves multi-objective optimization of the steady-state and dynamic performance of DAB converters.



Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 973 ◽  
Author(s):  
Chaochao Song ◽  
Alian Chen ◽  
Yiwei Pan ◽  
Chunshui Du ◽  
Chenghui Zhang

Dead-time effect has become an apparent issue in high-switching-frequency high-power dual active bridge (DAB) DC-DC converter. This paper gives a detailed analysis of phase-shift errors effect caused by dead time, including output voltage offset, soft-switching failure, optimal scheme failure, etc. Phase-shift errors effect will invalidate traditional analyses of optimal control and mislead the design of DAB converter. To overcome these drawbacks, various operating modes and an accurate transmission power model incorporating dead time under triple-phase-shift (TPS) control are developed. On this basis, an optimal TPS incorporating dead time (TPSiDT) scheme is further proposed to minimize the current stress, while guaranteeing soft-switching operation by using Lagrange multiplier method (LMM) and Genetic Algorithm (GA). The novel transmission power model can provide accurate power flow computation to avoid phase-shift errors. Therefore, in practical applications, the minimum current stress and soft-switching operation can be guaranteed, and the efficiency of DAB converter can be improved. Finally, the experimental results verify the feasibility of the proposed TPSiDT scheme.





2013 ◽  
Vol 392 ◽  
pp. 431-434
Author(s):  
Yi Xie ◽  
Wen Guang Luo

This paper presents the design of a new bi-directional DC-DC converter topology, which solves the problem that the IGBT current stress. The DC-DC converter uses soft-switching technology. By adopting the suggested method, the voltage stress and the switching loss of the IGBT can be reduced considerably. Moreover, the topology is very simple, we can analyze and build the topology electric circuit very easily. Finally, this paper uses Simulink module of Matlab software to simulate the process, and shows the experimental result. And the result shows us the DC-DC converter has great efficiency.



2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.







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