MASSACRE: a Machine for Automatic Surface Sampling and Automatic Contact-Resistance Evaluation

1962 ◽  
Vol 109 (3S) ◽  
pp. 210 ◽  
Author(s):  
A. Fairweather ◽  
R.L. Jury ◽  
F. Lazenby ◽  
A.E. Parker ◽  
D.H. Thrift ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Surface Sampling ◽  
Resistance Evaluation

Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors

2011 ◽  
Vol 12 (12) ◽  
pp. 2019-2024 ◽  
Author(s):  
Yong Xu ◽  
Takeo Minari ◽  
Kazuhito Tsukagoshi ◽  
Romain Gwoziecki ◽  
Romain Coppard ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Power Transfer ◽  
Organic Field Effect Transistors ◽  
Transfer Length ◽  
Resistance Evaluation

Direct Contact Resistance Evaluation of Thermoelectric Legs

2016 ◽  
Vol 56 (5) ◽  
pp. 861-869 ◽  
Author(s):  
Y. Kim ◽  
G. Yoon ◽  
S. H. Park
Keyword(s):  
Contact Resistance ◽  
Direct Contact ◽  
Resistance Evaluation

3-D thermal analysis and contact resistance evaluation of power cable joint

2016 ◽  
Vol 93 ◽  
pp. 1183-1192 ◽  
Author(s):  
Fan Yang ◽  
Peng Cheng ◽  
Hanwu Luo ◽  
Yongming Yang ◽  
Haibo Liu ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Contact Resistance ◽  
Power Cable ◽  
Resistance Evaluation

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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