The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

2015 ◽  
Vol 70 (3) ◽  
pp. 30302 ◽  
Author(s):  
Davood Raoufi ◽  
Atefeh Taherniya
2021 ◽  
Vol 102 (3) ◽  
pp. 95-111
Author(s):  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram

2021 ◽  
Vol MA2021-01 (33) ◽  
pp. 2014-2014
Author(s):  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram

2001 ◽  
Vol 392 (2) ◽  
pp. 305-310 ◽  
Author(s):  
Annette Hultåker ◽  
Kenneth Järrendahl ◽  
Jun Lu ◽  
Claes-Göran Granqvist ◽  
Gunnar A. Niklasson

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.


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