Synthesis and surface modification of light emitting silicon nanoparticles using non-thermal plasma techniques

2020 ◽  
Vol 89 (2) ◽  
pp. 20401
Author(s):  
Martin Müller ◽  
Pavel Galář ◽  
Jiří Stuchlík ◽  
Jan Kočka ◽  
Jonáš Kupka ◽  
...  

We have synthesised silicon nanoparticles (Si-NPs) with photoluminescence ranging from blue to IR spectral region using a low-pressure RF plasma in a flow-through glass tube reactor. The spectral position of photoluminescence band of Si-NPs is controlled by the synthesis parameters such as plasma power, silane and hydrogen concentration and pressure in the working area. Modification of Si-NPs surface both on air after the synthesis and in the vacuum chamber by second plasma in methylsilane atmosphere causes a blue spectral shift of the photoluminescence band.

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.


2010 ◽  
Vol 107 (1) ◽  
pp. 013103 ◽  
Author(s):  
Zheng Gong ◽  
Shirong Jin ◽  
Yujie Chen ◽  
Jonathan McKendry ◽  
David Massoubre ◽  
...  

2006 ◽  
Vol 965 ◽  
Author(s):  
Maria Vasilopoulou ◽  
Giorgos Pistolis ◽  
Athanasios Botsialas ◽  
Nikos Stathopoulos ◽  
Maria Rangoussi ◽  
...  

ABSTRACTPhotochemically induced emission tuning (PIET) for the definition of different color emitting areas in a single conducting polymeric layer is demonstrated. The commercially available poly(9-vinylcarbazole) (PVK), well known as a hole transporting layer in OLEDs technology, was used. The three primary colors emitting areas in a single layer of PVK film were defined using a suitable green emitter 1-[4-(dimethylamino)phenyl]-6-phenylhexa-1,3,5,-triene (DMA-DPH) along with the red emitter (4-dimethylamino-4'-nitrostilbene) (DANS). The selected emitters were dispersed in the PVK films in the presence of a photoacid generator (PAG). Various onium salts were tested as photoacid generators in order to select those, which could cause effectivily the photoinduced protonation and emission tuning of the probes molecules. Through proton induced bleaching of the red emitter and proton induced spectral shift of the green one, the definition of all three primary color emitting areas was possible. In this way the unexposed areas of the film remain red, the areas exposed with the intermediate dose become green and the fully exposed areas emit blue color. Intermediate colors and white light can also be obtained.


2020 ◽  
Vol 18 (3) ◽  
pp. 306-313
Author(s):  
Pallabi Pramanik ◽  
Shaswati Das ◽  
Arghya Adhikary ◽  
Chirasree Roy Chaudhuri ◽  
Anirban Bhattacharyya

Abstract A novel reactor was designed and implemented for water purification using deep ultraviolet light emitting diodes (LEDs). The focus was on minimizing the number of LEDs required for effective germicidal action. Simulation studies were carried out on the flow of water as well as the irradiance of UV. Variation was made in the beam divergence of the UV sources and reflectivity of optical coatings used for photon recycling. Based on optimized reactor designs, water purification was carried out both in the static and flow-through configuration. Water from various sources was spiked with a known bacterial strain, exposure studies were carried out and germicidal effect was determined. Our results indicate that under optimal design, a 3 mL volume of water shows a three order inactivation using a single UV-LED in a static reactor in 180 s. For a flow-through geometry, only three LEDs were used in the reactor implementation, and a multi-pass procedure was used to purify 150 mL of water from an Escherichia coli CFU count of 4.3 × 104/mL to 12/mL. While slow, this process requires less than 2 W, and can be powered from rechargeable sources. Faster processes can be implanted using multiple such reactor units in parallel, and can be optimized to the requirement and power levels.


2020 ◽  
Vol 54 (11) ◽  
pp. 1249-1254
Author(s):  
Sukrant Dhawan ◽  
Abhay Vidwans ◽  
Girish Sharma ◽  
Nabiel Hilmy Abuyazid ◽  
R Mohan Sankaran ◽  
...  

2008 ◽  
Vol 5 (9) ◽  
pp. 3069-3072 ◽  
Author(s):  
Hiroto Sekiguchi ◽  
Kei Kato ◽  
Akihiko Kikuchi ◽  
Katsumi Kishino

2013 ◽  
Vol 1536 ◽  
pp. 213-218 ◽  
Author(s):  
Thomas Lopez ◽  
Lorenzo Mangolini

ABSTRACTThe use of a continuous flow non-thermal plasma reactor for the formation of silicon nanoparticles has attracted great interest because of the advantageous properties of the process [1]. Despite the short residence time in the plasma (around 10 milliseconds), a significant fraction of the precursor, silane, is converted and collected in the form of nanopowder. The structure of the produced powder can be tuned between amorphous and crystalline by adjusting the power of the radio-frequency excitation source, with higher power leading to the formation of crystalline particles. Numerical modeling suggests that higher excitation power results in a higher plasma density, which in turn increases the nanoparticle heating rate due to the interaction between ions, free radicals and the nanopowder suspended in the plasma [2]. While the experimental evidence suggests that plasma heating may be responsible for the formation of crystalline powder, an understanding of the mechanism that leads to the crystallization of the powder while in the plasma is lacking. In this work, we present an experimental investigation on the crystallization kinetic of plasma-produced amorphous powder. Silicon nanoparticles are nucleated and grown using a non-thermal plasma reactor similar to the one described in [1], but operated at low power to give amorphous nanoparticles in a 3-10 nm size range. The particles are then extracted from the reactor using an orifice and aerodynamically dragged into a low pressure reactor placed in a tube furnace capable of reaching temperatures up to 1000°C. Raman and TEM have been used to monitor the crystalline fraction of the material as a function of the residence time and temperature. It is expected that for a residence time in the annealing region of approximately ∼300 milliseconds, a temperature of at least 750 °C is needed to observe the onset of crystallization. A range of crystalline percentages can be observed from 750 °C to 830 °C. A discussion of particle growth and particle interaction, based on experimental evidence, will be presented with its relation to the overall effect on crystallization. Further data analysis allows extrapolating the crystallization rate for the case of this simple, purely thermal system. We conclude that thermal effects alone are not sufficient to explain the formation of crystalline powder in non-thermal plasma reactors.


2017 ◽  
Vol 53 (10) ◽  
pp. 666-668 ◽  
Author(s):  
H. Sekiguchi ◽  
T. Imanishi ◽  
R. Matsuzaki ◽  
K. Ozaki ◽  
K. Yamane ◽  
...  

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