scholarly journals Comparison of Numerical Simulations of the Electron Density in the D-Region Ionosphere with Measurements of the Radar of Partial Reflections

2019 ◽  
Vol 224 ◽  
pp. 03011
Author(s):  
Aleksandr Gomonov ◽  
Roman Yurik ◽  
Yulia Shapovalova ◽  
Sergei Cherniakov ◽  
Olga Ogloblina
Keyword(s):  
Experimental Data ◽  
Numerical Simulations ◽  
Electron Density ◽  
High Electron ◽  
High Electron Density ◽  
Geophysical Institute ◽  
Partial Reflection ◽  
Polar Geophysical Institute ◽  
D Region ◽  
Good Agreement

The paper reports results of a comparison of the measured electron density in the ionospheric D-region measured using the partial reflection facility at the observatory. Tumanny of the Polar Geophysical Institute (69.0°N, 35.7°E) with numerical simulations performed using the theoretical model of the Polar Geophysical Institute (PGI) (Murmansk, Russian Federation). The model was examined using experimental data obtained under quiet geomagnetic conditions in March, 2017. The comparative analysis carried out in this study shows a very good agreement of the PGI model with experimental data and indicates that the IRI-2016 model fails to adequately reproduce measurements in regions with high electron density gradients.

Unusually high electron density in an intermolecular non-bonding region: Role of metal substrate

2017 ◽  
Vol 28 (4) ◽  
pp. 759-764 ◽  
Author(s):  
Chen-Guang Wang ◽  
Zhi-Hai Cheng ◽  
Xiao-Hui Qiu ◽  
Wei Ji
Keyword(s):  
Electron Density ◽  
Metal Substrate ◽  
High Electron ◽  
High Electron Density

The penetration and ricochet of ogive-nosed rigid projectiles obliquely impacting metallic targets

2021 ◽  
pp. 204141962110377
Author(s):  
Yaniv Vayig ◽  
Zvi Rosenberg
Keyword(s):  
Experimental Data ◽  
Numerical Simulations ◽  
Dynamic Pressure ◽  
Oblique Impacts ◽  
Simulation Results ◽  
The Impact ◽  
Penetration Depths ◽  
Resistance To Penetration ◽  
Good Agreement

A large number of 3D numerical simulations were performed in order to follow the trajectory changes of rigid CRH3 ogive-nosed projectiles, impacting semi-infinite metallic targets at various obliquities. These trajectory changes are shown to be related to the threshold ricochet angles of the projectile/target pairs. These threshold angles are the impact obliquities where the projectiles end up moving in a path parallel to the target’s face. They were found to depend on a non-dimensional entity which is equal to the ratio between the target’s resistance to penetration and the dynamic pressure exerted by the projectile upon impact. Good agreement was obtained by comparing simulation results for these trajectory changes with experimental data from several published works. In addition, numerically-based relations were derived for the penetration depths of these ogive-nosed projectiles at oblique impacts, which are shown to agree with the simulation results.

New insights into electrolyte-component biased and transfer- and transport-limited charge recombination in dye-sensitized solar cells

RSC Advances ◽  
2015 ◽  
Vol 5 (103) ◽  
pp. 84959-84966 ◽  
Author(s):  
Dong-Li Gao ◽  
Yi Wang ◽  
Ping Zhang ◽  
Li-Min Fu ◽  
Xi-Cheng Ai ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Density ◽  
Dye Sensitized Solar Cells ◽  
Charge Recombination ◽  
High Electron ◽  
High Electron Density ◽  
Dye Sensitized ◽  
Electrolyte Component ◽  
Sensitized Solar Cells

Charge recombination takes place, respectively, within the frameworks of transfer- and transport-limited recombination mechanisms, at low and high electron density.

High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

2020 ◽  
Vol 127 (21) ◽  
pp. 215706 ◽  
Author(s):  
Nidhin Kurian Kalarickal ◽  
Zhanbo Xia ◽  
Joe F. McGlone ◽  
Yumo Liu ◽  
Wyatt Moore ◽  
...  
Keyword(s):  
Electron Density ◽  
High Electron ◽  
High Electron Density ◽  
Modulation Doping ◽  
Spacer Layer

Donor-Stabilized Silylene/Phosphine-Supported Carbon(0) Center with High Electron Density

2017 ◽  
Vol 56 (24) ◽  
pp. 6891-6895 ◽  
Author(s):  
Thibault Troadec ◽  
Tatsuya Wasano ◽  
Romaric Lenk ◽  
Antoine Baceiredo ◽  
Nathalie Saffon-Merceron ◽  
...  
Keyword(s):  
Electron Density ◽  
High Electron ◽  
High Electron Density

Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

2003 ◽  
Vol 200 (1) ◽  
pp. 168-174 ◽  
Author(s):  
Narihiko Maeda ◽  
Takehiko Tawara ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi
Keyword(s):  
Electron Density ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
High Electron Density ◽  
Heterostructure Field Effect Transistors
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