SOI multimode waveguide bend with radially bridged SWGs for broadband (de)multiplexing -INVITED

A novel broadband multimode waveguide bend is proposed that supports the propagation of multiple TE modes on a silicon-on-insulator platform. The gradient curvature bend utilizes trapezoidal subwavelength grating (SWG) segments, connected by adiabatically tapered radial strips to achieve efficient mode (de)multiplexing. The inclusion of the radial strips offers an extra degree of design freedom, allowing the realization of a multimode bend with only one single full etch step. The access waveguide has a width of 2.075 μm with an effective radius of 10 μm. Propagation loss for all modes remains below 2.96 dB, and intermodal crosstalk has a maximum of -19 dB across a broad bandwidth of 100 nm, centred at 1550 nm. This work presents an excellent design choice for broadband mode-division multiplexing operations.

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Design of an ultrasharp silicon multimode waveguide bend assisted by multiregional subwavelength grating structures

Journal of Nanophotonics ◽

10.1117/1.jnp.15.046011 ◽

2021 ◽

Vol 15 (04) ◽

Author(s):

Juanli Wang ◽

Shangsen Sun ◽

Runsen Zhang ◽

Fengchun Zhang ◽

Ning Zhu

Keyword(s):

Multimode Waveguide ◽

Subwavelength Grating ◽

Waveguide Bend

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High-efficiency broad-bandwidth subwavelength grating-based fiber-chip coupler in silicon-on-insulator

Optical Engineering ◽

10.1117/1.oe.57.1.017115 ◽

2018 ◽

Vol 57 (01) ◽

pp. 1 ◽

Cited By ~ 4

Author(s):

Siddharth Nambiar ◽

Shankar Kumar Selvaraja

Keyword(s):

High Efficiency ◽

Silicon On Insulator ◽

Broad Bandwidth ◽

Subwavelength Grating

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Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication

Micromachines ◽

10.3390/mi12040414 ◽

2021 ◽

Vol 12 (4) ◽

pp. 414

Author(s):

Marta Maria Kluba ◽

Jian Li ◽

Katja Parkkinen ◽

Marcus Louwerse ◽

Jaap Snijder ◽

...

Keyword(s):

Complex Geometry ◽

Pressure Sensors ◽

Silicon On Insulator ◽

Test Case ◽

Mems Devices ◽

Device Layer ◽

Mems Fabrication ◽

Silicon Islands ◽

Design Freedom ◽

Deep Brain

Several Silicon on Insulator (SOI) wafer manufacturers are now offering products with customer-defined cavities etched in the handle wafer, which significantly simplifies the fabrication of MEMS devices such as pressure sensors. This paper presents a novel cavity buried oxide (BOX) SOI substrate (cavity-BOX) that contains a patterned BOX layer. The patterned BOX can form a buried microchannels network, or serve as a stop layer and a buried hard-etch mask, to accurately pattern the device layer while etching it from the backside of the wafer using the cleanroom microfabrication compatible tools and methods. The use of the cavity-BOX as a buried hard-etch mask is demonstrated by applying it for the fabrication of a deep brain stimulation (DBS) demonstrator. The demonstrator consists of a large flexible area and precisely defined 80 µm-thick silicon islands wrapped into a 1.4 mm diameter cylinder. With cavity-BOX, the process of thinning and separating the silicon islands was largely simplified and became more robust. This test case illustrates how cavity-BOX wafers can advance the fabrication of various MEMS devices, especially those with complex geometry and added functionality, by enabling more design freedom and easing the optimization of the fabrication process.

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An Open-Source Artificial Neural Network Model for Polarization-Insensitive Silicon-on-Insulator Subwavelength Grating Couplers

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/jstqe.2018.2885486 ◽

2019 ◽

Vol 25 (3) ◽

pp. 1-5 ◽

Cited By ~ 8

Author(s):

Dusan Gostimirovic ◽

Winnie N. Ye

Keyword(s):

Neural Network ◽

Artificial Neural Network ◽

Open Source ◽

Network Model ◽

Neural Network Model ◽

Artificial Neural Network Model ◽

Silicon On Insulator ◽

Grating Couplers ◽

Subwavelength Grating ◽

Polarization Insensitive

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Fully three-dimensional analysis of a photonic crystal assisted silicon on insulator waveguide bend

International Journal of Modern Physics B ◽

10.1142/s0217979218503447 ◽

2018 ◽

Vol 32 (31) ◽

pp. 1850344 ◽

Cited By ~ 1

Author(s):

N. Eti ◽

Z. Çetin ◽

H. S. Sözüer

Keyword(s):

Photonic Crystal ◽

Numerical Study ◽

Fdtd Method ◽

Three Dimensional ◽

Silicon On Insulator ◽

Geometrical Parameters ◽

Low Loss ◽

Bending Loss ◽

Difference Time ◽

Waveguide Bend

A detailed numerical study of low-loss silicon on insulator (SOI) waveguide bend is presented using the fully three-dimensional (3D) finite-difference time-domain (FDTD) method. The geometrical parameters are optimized to minimize the bending loss over a range of frequencies. Transmission results for the conventional single bend and photonic crystal assisted SOI waveguide bend are compared. Calculations are performed for the transmission values of TE-like modes where the electric field is strongly transverse to the direction of propagation. The best obtained transmission is over 95% for TE-like modes.

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