scholarly journals Complex conductivity in the presence of long range potential fluctuations. Application to the determination of the gap state density in undoped and boron doped a-Si : H films grown by CVD

1988 ◽  
Vol 49 (11) ◽  
pp. 1933-1950 ◽  
Author(s):  
F.M. Roche ◽  
B. Pistoulet ◽  
T. Soegandi
Keyword(s):  
Long Range ◽  
State Density ◽  
Complex Conductivity ◽  
Potential Fluctuations ◽  
Boron Doped ◽  
Range Potential ◽  
Gap State

Determination of Drift, Extended State Mobility and Recombination Lifetime in Compensated a-Si:H by Photomixing

1993 ◽  
Vol 297 ◽  
Author(s):  
Yi Tang ◽  
R. Braunstein ◽  
Bolko Von Roedern ◽  
F.R. Shapiro
Keyword(s):  
Long Range ◽  
Time Of Flight ◽  
Transport Processes ◽  
Extended State ◽  
Recombination Lifetime ◽  
Potential Fluctuations ◽  
Range Potential

Mobilities of a series of compensated a-Si:H samples, measured earlier by the time-of-flight technique [1], were determined by the technique of photomixing. We have found that both the extended state and the drift mobilities decrease as the compensation increases. Modelling these transport processes in the context of the photomixing technique, it is shown that long-range potential fluctuations can account for the decrease in the extended state mobility in compensated samples.

Photomking Determination of Mobility and Lifetime in Intrinsic a-Si:H

1992 ◽  
Vol 258 ◽  
Author(s):  
Yi Tang ◽  
R. Braunstein ◽  
Bolko Von Roedern
Keyword(s):  
Glow Discharge ◽  
Long Range ◽  
Beat Frequency ◽  
Hot Wire ◽  
Potential Fluctuations ◽  
Recombination Processes ◽  
Staebler Wronski Effect ◽  
First Time ◽  
Glow Discharge Deposition

ABSTRACTA photomixing technique was employed to determine the lifetime and the mobility in intrinsic a-Si:H, by measuring the power of the beat frequency in conjunction with the dc. photocurrent. Both the mobility and lifetime were found to decrease continuously following the light-soaking process, which indicates the existence of long-range potential fluctuations and a change in the recombination processes due to light-soaking. For the first time, evidence is provided that degradation is accompanied by loss of mobility, a fact that is neglected in all prevailing models for the Staebler-Wronski effect. Intrinsic a-Si:H samples produced by glow-discharge deposition and the hot wire technique were employed in this work.

Charge carrier photogeneration yield in amorphous materials with long-range potential fluctuations

2002 ◽  
Vol 299-302 ◽  
pp. 305-309 ◽  
Author(s):  
E.V. Emelianova ◽  
V.I. Arkhipov ◽  
S.O. Kasap ◽  
G.J. Adriaenssens
Keyword(s):  
Charge Carrier ◽  
Long Range ◽  
Amorphous Materials ◽  
Potential Fluctuations ◽  
Range Potential
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