Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-Gaas Using In-Situ Integrated Process

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Hong ◽  
D. Vakhshoori ◽  
J. P. Mannaerts ◽  
J. Kwo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Integrated System ◽  
Integrated Process ◽  
Low Resistivity ◽  
Uniform Doping

ABSTRACTVery low-resistivity non-alloyed ohmic contacts (Rc) to both p- and n-GaAs were realized using molecular beam epitaxy (MBE) in a vacuum integrated system. Three different metals of Au, Ag, and Nb were in-situ deposited on (1) p+-GaAs which was heavily Be-doped either in a uniform doping or with a 5-doping scheme; and (2) n+-GaAs which was doped in a 5-pair Si δ-doping with a spacer GaAs-Si 2.5 nm thick. In both cases, low Rc values of ≤ (1-5) x 10-7 Ω-cm2 were achieved.

scholarly journals Омические контакты к оксиду европия для устройств спинтроники

2019 ◽  
Vol 45 (7) ◽  
pp. 38
Author(s):  
А.А. Андреев ◽  
Ю.В. Грищенко ◽  
И.А. Черных ◽  
М.Л. Занавескин ◽  
Э.Ф. Лобанович
Keyword(s):  
Molecular Beam Epitaxy ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
In Situ Fabrication ◽  
Linear Current ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

AbstractA technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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