scholarly journals Preparation and Characterization of Pure Organic Dielectric Composites for Capacitors

2018 ◽  
Vol 160 ◽  
pp. 03002
Author(s):  
Xin Mao ◽  
Jinliang Lv ◽  
Fangfang Zhang ◽  
Bo Wu ◽  
Jie Yang ◽  
...  

This work reports the excellent dielectric composites were prepared from polyimide (PI) and poly(vinylidene fluoride) (PVDF) via solution blending and thermal imidization or chemical imidization. The dielectric and thermal properties of the composites were studied. Results indicated that the dielectric properties of the composites synthesized by these two methods were enhanced through the introduction of PVDF, and the composites exhibited excellent thermal stability. Compared to the thermal imidization, the composites prepared by chemical imidization exhibited superior dielectric properties. This study demonstrated that the PI/PVDF composites were potential dielectric materials in the field of electronics.

2021 ◽  
pp. 095400832110311
Author(s):  
Dandan Yuan ◽  
Rundi Yang ◽  
Yuanting Xu ◽  
Xufu Cai

Poly(vinylidene fluoride) (PVDF)-based composites attract tremendous attention as dielectric materials. However, their development has been limited due to the raised problem in the in-homogeneous polymer composites. In this work, a novel PVDF-based film incorporated with polyamide-1, containing the highest density of dipole among all polyamides, was prepared to improve the crystallization behaviors and dielectric properties. The results showed that the optimal concentration of polyamide-1 in PVDF was 6 wt.%. The crystallization rate of PVDF was improved in the presence of polyamide-1. Interestingly, the polyamide-1 was conductive to the formation of β form crystal of PVDF, which exhibited great electric performance. The dielectric constant of PVDF increased sharply and loss tangent still kept at a low level of 0.03@100 Hz when the concentration of polyamide-1 was 6 wt.%. This work may provide a new direction to design dielectric materials for PVDF blends.


2010 ◽  
Vol 152-153 ◽  
pp. 44-50 ◽  
Author(s):  
Gui Bao Guo ◽  
Er Ding Han ◽  
Sheng Li An

A new method based on a solution graft technique was used to prepare poly (vinylidene fluoride) grafted polystyrene sulfonated acid (PVDF-g-PSSA) proton exchange membrane. Polystyrene is grafted into PVDF modified by plain sodium silicate (Na4SiO4). There is a linear relationship between the degree of grafting and the content of Na4SiO4. Fourier transform infrared spectroscopy is used to characterize changes of the membrane's microstructures after grafting and sulfonation. The morphology of the membrane's microstructures after grafting and sulfonation is studied by scanning electrolytic microscope (SEM). The effect of plain sodium silicate (Na4SiO4) concentration and relative humidity on the conductivity of the electrolyte was investigated by the impedance at room temperature. The results show that the styrene has been grafted into PVDF. The conductivity of PVDF-g-PSSA electrolyte doped 10% plain sodium silicate (Na4SiO4) is 0.016 S/cm at room temperature. The conductivity of the electrolyte changes slightly at a relative humidity range of 20%-70%. The weightlessness of PVDF-g-PSSA electrolyte heated to 40°C was less than 2%, which indicated that water capacity was good.


2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.


Sign in / Sign up

Export Citation Format

Share Document