Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO.

2004 ◽  
Vol 829 ◽  
Author(s):  
Kelly Ip ◽  
Brent Gila ◽  
Andrea Onstine ◽  
Eric Lambers ◽  
Young-Woo Heo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Ozone Exposure ◽  
Saturation Current ◽  
Post Deposition Annealing ◽  
Barrier Heights ◽  
Saturation Current Density ◽  
Uv Ozone ◽  
Post Deposition

ABSTRACTUV-ozone cleaning prior to metal deposition of either e-beam Pt contacts or sputtered W contacts on n-type single-crystal ZnO is found to significantly improve their rectifying characteristics. Pt contacts deposited directly on the as-received ZnO surface are Ohmic but show rectifying behavior with ozone cleaning. The Schottky barrier height of these Pt contacts was 0.70 eV, with ideality factor of 1.5 and a saturation current density of 6.2 × 10−6 A·cm−2. In contrast, the as-deposited W contacts are Ohmic, independent of the use of ozone cleaning. Post-deposition annealing at 700 °C produces rectifying behavior with Schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The improvement in rectifying properties of both the Pt contacts is related to removal of surface carbon contamination from the ZnO.

Gas‐source molecular beam epitaxy of wide‐band‐gap Zn1−xHgxSe (x=0–0.14)

1995 ◽  
Vol 66 (24) ◽  
pp. 3337-3339 ◽  
Author(s):  
K. Hara ◽  
H. Machimura ◽  
M. Usui ◽  
H. Munekata ◽  
H. Kukimoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Wide Band ◽  
Wide Band Gap ◽  
Gas Source

Er doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates

2003 ◽  
Vol 764 ◽  
Author(s):  
N. Rousseau ◽  
O. Briot ◽  
V. Ribes ◽  
R.L. Aulombard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Physical Phenomenon ◽  
Chemical Vapour ◽  
Rare Earth Ions ◽  
Crystal Quality ◽  
High Quality ◽  
Gas Source ◽  
Er Doped

AbstractSince the work of Favennec et al.[1] it is well known that the quenching of luminescence from rare earth ions decreases with the host band gap. This has led to a large activity with silicon implanted or doped with RE, and then GaAs was used, in hope to realize simple, cheap light emitters. With a band gap of 3.4 eV at room temperature, GaN is even better suited to such applications. As a matter of fact, Steckl et al.[2] have demonstrated a green light emitting device based on Er doped GaN. This resulted in a renewed effort in this direction, but the crystal quality still have to be mastered and the physical phenomenon involved to be understood. In this work, GaN and Er-doped GaN with various Er concentrations were grown by gas source molecular beam epitaxy on high quality GaN templates grown by metalorganic chemical vapour deposition. In order to understand the influence of the Er incorporation on the crystal quality of GaN, Er-doped GaN were grown with a concentration between 0.1% and 5%. High quality undoped GaN were also grown, as a reference material, to show how the smallest amount of Er may affect drastically the structural and optical properties. All the samples were characterized by scanning electron microscopy, atomic force microscopy and X-ray diffraction. With these measurements, we demonstrate a strong correlation between the Er concentration and the surface roughness and the crystalline quality. This study shows that the activation of the Erbium luminescence is not improved with improving crystal quality. This assumption supports the idea that Er luminescence should be related to defect center in GaN.

Schottky Barrier Heights of A1/p-Sil-xGex

1995 ◽  
Vol 379 ◽  
Author(s):  
R. L. Jiang ◽  
J. Li ◽  
X. C. Zhou ◽  
J. N. Liu ◽  
Y. D. Zheng
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Schottky Contacts ◽  
Rapid Thermal Process ◽  
Strained Si ◽  
Strained Layers ◽  
Barrier Heights ◽  
Pressure Chemical

ABSTRACTElectrical properties of Al/p-Sil-xGex Schottky contacts were investigated. The Sil-xGexstrained layers were grown by using Rapid Thermal Process/Very Low Pressure-Chemical Vapor Deposition. It was found that Schottky barrier height decreased with increasing Ge fraction. The decrement is in accordance with the decrement of the bandgap of the strained Sil-xGex. The Fermi level at the interface is pinned at about 0. 43eV below the conduction band. The influence of strain relaxation for SiGe alloy layers and the Si cap layers on the properties of Schottky contacts were also investigated.

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