Nonalloyed InGaAs/GaAs ohmic contacts for self‐aligned ion implanted GaAs heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.108150 ◽

1992 ◽

Vol 61 (20) ◽

pp. 2455-2457 ◽

Author(s):

J. H. Huang ◽

J. K. Abrokwah ◽

W. J. Ooms

Keyword(s):

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Download Full-text

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711681 ◽

1997 ◽

Author(s):

K.K. Chu ◽

M.J. Murphy ◽

J. Burm ◽

W.J. Schaff ◽

L.F. Eastman ◽

...

Keyword(s):

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors

Journal of Applied Physics ◽

10.1063/1.4975473 ◽

2017 ◽

Vol 121 (6) ◽

pp. 065301 ◽

Author(s):

A. Shriki ◽

R. Winter ◽

Y. Calahorra ◽

Y. Kauffmann ◽

G. Ankonina ◽

...

Keyword(s):

Formation Mechanism ◽

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Low Resistance Ti/Al/Mo/Au Ohmic Contacts for AlGaN/GaN Heterostructure Field Effect Transistors

phys stat sol (a) ◽

10.1002/1521-396x(200212)194:2<583::aid-pssa583>3.0.co;2-3 ◽

2002 ◽

Vol 194 (2) ◽

pp. 583-586 ◽

Author(s):

D. Selvanathan ◽

L. Zhou ◽

V. Kumar ◽

I. Adesida

Keyword(s):

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Low Resistance ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649381 ◽

1997 ◽

Author(s):

Chu ◽

Murphy ◽

Burm ◽

Schaff ◽

Eastman ◽

...

Keyword(s):

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

Download Full-text

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

Download Full-text

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters ◽

10.1109/55.506356 ◽

1996 ◽

Vol 17 (7) ◽

pp. 325-327 ◽

Author(s):

M.A. Khan ◽

Q. Chen ◽

J.W. Yang ◽

M.S. Shur ◽

B.T. Dermott ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

Download Full-text