Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution x‐ray diffraction

1993 ◽  
Vol 62 (22) ◽  
pp. 2815-2817 ◽  
Author(s):  
Woo‐Young Choi ◽  
Clifton G. Fonstad
2013 ◽  
Vol 52 (7R) ◽  
pp. 071001
Author(s):  
Shunji Yoshida ◽  
Toshiya Yokogawa ◽  
Yasuhiko Imai ◽  
Shigeru Kimura

1997 ◽  
Vol 482 ◽  
Author(s):  
M. D. Mccluskey ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
D. P. Bour ◽  
C. Chua ◽  
...  

AbstractEvidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.


1996 ◽  
Vol 79 (5) ◽  
pp. 2332-2336 ◽  
Author(s):  
E. Idiart‐Alhor ◽  
J. Y. Marzin ◽  
M. Quillec ◽  
G. Le Roux ◽  
G. Patriarche

2002 ◽  
Vol 81 (27) ◽  
pp. 5120-5122 ◽  
Author(s):  
H. H. Lee ◽  
M. S. Yi ◽  
H. W. Jang ◽  
Y.-T. Moon ◽  
S.-J. Park ◽  
...  

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