Room‐temperature measurements of strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma‐enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.109508 ◽

1993 ◽

Vol 62 (16) ◽

pp. 1976-1978 ◽

Author(s):

S. S. Murtaza ◽

R. Qian ◽

D. Kinosky ◽

R. Mayer ◽

A. F. Tasch ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Room Temperature ◽

Chemical Vapor ◽

Temperature Measurements ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

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Influence of excitonic singlet-triplet splitting on the photoluminescence of Si∕SiO2 multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2141620 ◽

2006 ◽

Vol 24 (1) ◽

pp. 141-145 ◽

Author(s):

R. Rölver ◽

M. Först ◽

O. Winkler ◽

B. Spangenberg ◽

H. Kurz

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Remote Plasma ◽

Triplet Splitting

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Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.3002300 ◽

2008 ◽

Vol 93 (16) ◽

pp. 161905 ◽

Author(s):

Ho-Sang Kwack ◽

Bong-Joon Kwon ◽

Jin-Soo Chung ◽

Yong-Hoon Cho ◽

Soon-Yong Kwon ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Stimulated Emission ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Violet Light ◽

Metalorganic Chemical

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Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.3013435 ◽

2008 ◽

Vol 104 (9) ◽

pp. 093106 ◽

Author(s):

T. S. Ko ◽

T. C. Lu ◽

T. C. Wang ◽

J. R. Chen ◽

R. C. Gao ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Organic Chemical ◽

Multiple Quantum ◽

Optical Study ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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The Effects of In Flow during Growth Interruption on the Optical Properties of InGaN Multiple Quantum Wells Grown by Low Pressure Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l371 ◽

2001 ◽

Vol 40 (Part 2, No. 4B) ◽

pp. L371-L373 ◽

Author(s):

Shi-Jong Leem ◽

Min Hong Kim ◽

Johngoen Shin ◽

Yoonho Choi ◽

Jichai Jeong

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Growth Interruption ◽

Metalorganic Chemical

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Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire

Applied Physics Letters ◽

10.1063/1.1588370 ◽

2003 ◽

Vol 83 (1) ◽

pp. 33-35 ◽

Author(s):

D. I. Florescu ◽

S. M. Ting ◽

J. C. Ramer ◽

D. S. Lee ◽

V. N Merai ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Metalorganic Chemical

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Growth and optical bistability of Zn0.78Cd0.22Se-ZnSe multiple quantum wells by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90881-8 ◽

1994 ◽

Vol 138 (1-4) ◽

pp. 629-632 ◽

Author(s):

B.J. Yang ◽

L.C. Chen ◽

X.W. Fan ◽

J.Y. Zhang ◽

Z.H. Zheng ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Optical Bistability ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Metalorganic Chemical

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Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2012.06.001 ◽

2012 ◽

Vol 540 ◽

pp. 46-48 ◽

Author(s):

D.G. Zhao ◽

D.S. Jiang ◽

L.C. Le ◽

L.L. Wu ◽

L. Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Metalorganic Chemical

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Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(98)00457-x ◽

1998 ◽

Vol 321 (1-2) ◽

pp. 111-115 ◽

Author(s):

Sung-Jae Joo ◽

Euijoon Yoon ◽

Seok-Hee Hwang ◽

Ki-Woong Whang ◽

Sang Kook Chun ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591122 ◽

1999 ◽

Vol 17 (6) ◽

pp. 2530 ◽

Author(s):

Chong-Yi Lee ◽

Hung-Pin Shiao ◽

Meng-Chyi Wu ◽

Chyuan-Wei Chen

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Growth Temperature ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Metalorganic Chemical

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Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition

physica status solidi (c) ◽

10.1002/pssc.200461496 ◽

2005 ◽

Vol 2 (7) ◽

pp. 2377-2380 ◽

Author(s):

Z. C. Feng ◽

W. Liu ◽

S. J. Chua ◽

J. H. Chen ◽

C. C. Yang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Recombination Mechanism ◽

Metalorganic Chemical

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