Growth of high quality single‐domain single‐crystal films of PbTiO3

AbstractThe epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.

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Organic Molecule Assisted Growth of Perovskite Films Consisting of Square Grains by Surface-Confined Process

Nanomaterials ◽

10.3390/nano11020473 ◽

2021 ◽

Vol 11 (2) ◽

pp. 473

Author(s):

Shao Xin Yan ◽

Chang Bao Han ◽

Jianhua Huang ◽

Yichuan Chen ◽

Xiaobo Zhang ◽

...

Keyword(s):

Single Crystal ◽

Single Crystals ◽

Organic Molecule ◽

Lateral Growth ◽

High Quality ◽

Grain Number ◽

Confined Spaces ◽

Single Crystal Films ◽

Crystal Films ◽

Pl Emission

Organic–inorganic perovskite single crystals are promising in the field of optoelectronics due to their excellent optoelectronic properties. However, the ion transport of perovskite precursor is poor in confined spaces, which results in difficulty in the preparation of perovskite single-crystal films. Herein, MAPbBr3 films consisting of square grains were fabricated by the surface-confined process using the organic molecule PEAI (phenethylammonium iodide). Under the effect of oversaturation gradient, PEA+ is combined with the surface of perovskite grain from top to side, which constrains the lateral growth of grains and induces a downward growth of perovskite, leading to the formation of square grains. With the improvement of concentration PEAI, the perovskite film exhibits a decreased side length of grains (from 0.98 to 12.96 μm) and increased grain number and coverage, as well as crystallinity. The perovskite single crystalline grain films with PEAI showed double photoluminescence (PL) emission peaks due to the existence of iodine-rich perovskite. This work may provide a practical way to fabricate high-quality perovskite films for perovskite photoelectronic devices.

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Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films

Materials Today Chemistry ◽

10.1016/j.mtchem.2020.100266 ◽

2020 ◽

Vol 16 ◽

pp. 100266

Author(s):

A. Osumi ◽

K. Nakano ◽

N. Sannodo ◽

S. Maruyama ◽

Y. Matsumoto ◽

...

Keyword(s):

Single Crystal ◽

High Quality ◽

Vapor Liquid Solid ◽

Single Crystal Films ◽

Crystal Films ◽

Vapor Liquid Solid Growth ◽

Vapor Liquid

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Epitaxial Silicides

MRS Proceedings ◽

10.1557/proc-10-79 ◽

1981 ◽

Vol 10 ◽

Cited By ~ 1

Author(s):

R. T. Tung ◽

J. M. Poate ◽

J. C. Bean ◽

J. M. Gibson ◽

D. C. Jacobson

Keyword(s):

Molecular Beam Epitaxy ◽

Single Crystal ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Epitaxial Films ◽

Semiconductor Heterostructures ◽

High Quality ◽

Single Crystal Films ◽

Crystal Films ◽

Sharp Interfaces

The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted. Perfect singlecrystal CoSi2 films can be grown on Si(111) substrates by ultrahigh vacuum techniques using conventional deposition and annealing at about 900°C and molecular beam epitaxy codeposition at about 600°C. The single-crystal films are rotated 180° with respect to the substrate. Novel defect arrays are observed at the interface. Resistivities in epitaxial films are lower than those reported in polycrystalline layers. High quality silicon films can be grown on the silicides to form semiconductor/metal/semiconductor heterostructures.

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Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069272 ◽

1970 ◽

Vol 28 ◽

pp. 456-457

Author(s):

L. E. Murr ◽

G. Wong

Keyword(s):

Single Crystal ◽

High Vacuum ◽

Ultra High Vacuum ◽

High Rate ◽

Flash Evaporation ◽

Optimum Load ◽

Single Crystal Films ◽

Crystal Films ◽

A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

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