Plasma etched polycrystalline hot‐filament chemical vapor deposited diamond thin films and their electrical characteristics

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

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Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114920 ◽

1995 ◽

Vol 67 (24) ◽

pp. 3557-3559 ◽

Cited By ~ 10

Author(s):

S. Mirzakuchaki ◽

M. Hajsaid ◽

H. Golestanian ◽

R. Roychoudhury ◽

E. J. Charlson ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Porous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Selective Area ◽

Diamond Thin Films ◽

Hot Filament ◽

Area Deposition

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Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.433-436.451 ◽

2003 ◽

Vol 433-436 ◽

pp. 451-454 ◽

Cited By ~ 1

Author(s):

Hoa Thi Mai Pham ◽

Tolgay Akkaya ◽

Charles R. de Boer ◽

Pasqualina M. Sarro

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Chemical Vapor ◽

Electrical Characteristics ◽

Chemical Vapor Deposited

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Effect of Oxidation due to Ultraviolet-Light Irradiation on Diamond Thin Films Synthesized by Hot-Filament Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1609 ◽

1995 ◽

Vol 34 (Part 2, No. 12A) ◽

pp. L1609-L1611 ◽

Cited By ~ 4

Author(s):

Yutaka Ishikawa ◽

Hideto Yoshimi ◽

Yoichi Hirose

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Ultraviolet Light ◽

Vapor Deposition ◽

Chemical Vapor ◽

Light Irradiation ◽

Ultraviolet Light Irradiation ◽

Diamond Thin Films ◽

Hot Filament

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Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

MRS Proceedings ◽

10.1557/proc-423-589 ◽

1996 ◽

Vol 423 ◽

Author(s):

Hassan Golestanian ◽

S. Mirzakuchaki ◽

E. J. Charlson ◽

T. Stacy ◽

E. M. Charlson

Keyword(s):

Thin Films ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Volume Resistivity ◽

X Ray Diffraction ◽

X Ray ◽

Boron Doped ◽

Chemical Vapor Deposited ◽

Low Volume ◽

Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

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