Deep donor state of vanadium in cubic silicon carbide (3C‐SiC)

Applied Physics Letters ◽

10.1063/1.112851 ◽

1994 ◽

Vol 65 (14) ◽

pp. 1811-1813 ◽

Author(s):

K. F. Dombrowski ◽

U. Kaufmann ◽

M. Kunzer ◽

K. Maier ◽

J. Schneider ◽

...

Keyword(s):

Silicon Carbide ◽

Donor State ◽

Cubic Silicon Carbide

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Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

Physical Review B ◽

10.1103/physrevb.103.195202 ◽

2021 ◽

Vol 103 (19) ◽

Author(s):

Peter A. Schultz ◽

Renee M. Van Ginhoven ◽

Arthur H. Edwards

Keyword(s):

Silicon Carbide ◽

Theoretical Study ◽

Intrinsic Defects ◽

Cubic Silicon Carbide

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Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.457-460.317 ◽

2004 ◽

Vol 457-460 ◽

pp. 317-320 ◽

Author(s):

S. Miyajima ◽

A. Yamada ◽

Makoto Konagai

Keyword(s):

Silicon Carbide ◽

Low Temperature ◽

Cubic Silicon Carbide

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Energy band structure of diamond, cubic silicon carbide, silicon, and germanium

International Journal of Quantum Chemistry ◽

10.1002/qua.560010658 ◽

2009 ◽

Vol 1 (S1) ◽

pp. 533-566 ◽

Author(s):

Frank Herman ◽

Richard L. Kortum ◽

Charles D. Kuglin

Keyword(s):

Silicon Carbide ◽

Band Structure ◽

Energy Band ◽

Energy Band Structure ◽

Silicon And Germanium ◽

Cubic Silicon Carbide

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Molecular dynamics simulation model for the quantitative assessment of tool wear during single point diamond turning of cubic silicon carbide

Computational Materials Science ◽

10.1016/j.commatsci.2011.07.052 ◽

2012 ◽

Vol 51 (1) ◽

pp. 402-408 ◽

Author(s):

Saurav Goel ◽

Xichun Luo ◽

Robert L. Reuben

Keyword(s):

Molecular Dynamics ◽

Silicon Carbide ◽

Molecular Dynamics Simulation ◽

Tool Wear ◽

Simulation Model ◽

Quantitative Assessment ◽

Single Point ◽

Diamond Turning ◽

Dynamics Simulation ◽

Cubic Silicon Carbide

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Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5μm spectral range for photonic quantum networks

Physical Review B ◽

10.1103/physrevb.98.165203 ◽

2018 ◽

Vol 98 (16) ◽

Author(s):

S. A. Zargaleh ◽

S. Hameau ◽

B. Eble ◽

F. Margaillan ◽

H. J. von Bardeleben ◽

...

Keyword(s):

Silicon Carbide ◽

Spectral Range ◽

Nitrogen Vacancy ◽

Quantum Networks ◽

Nitrogen Vacancy Center ◽

Cubic Silicon Carbide ◽

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Twinning effects in the single/nanocrystalline cubic silicon carbide subjected to nanoindentation loading

10.1016/j.mtla.2018.09.003 ◽

2018 ◽

Vol 3 ◽

pp. 304-325 ◽

Author(s):

Saeed Zare Chavoshi ◽

Shuozhi Xu

Keyword(s):

Silicon Carbide ◽

Cubic Silicon Carbide

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Oxynitridation of cubic silicon carbide (100) surfaces

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581922 ◽

1999 ◽

Vol 17 (5) ◽

pp. 2629-2633 ◽

Author(s):

F. Amy ◽

L. Douillard ◽

V. Yu. Aristov ◽

P. Soukiassian

Keyword(s):

Silicon Carbide ◽

Cubic Silicon Carbide

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Advances in Cubic Silicon Carbide Surfaces and Self-Organized One Dimensional Sub-Nanoscale Objects

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1997609 ◽

1997 ◽

Vol 07 (C6) ◽

pp. C6-101-C6-113 ◽

Author(s):

P. Soukiassian ◽

F. Semond

Keyword(s):

Silicon Carbide ◽

One Dimensional ◽

Self Organized ◽

Cubic Silicon Carbide

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Doping in cubic silicon–carbide

Applied Physics Letters ◽

10.1063/1.124285 ◽

1999 ◽

Vol 75 (1) ◽

pp. 88-90 ◽

Author(s):

V. A. Gubanov ◽

C. Y. Fong

Keyword(s):

Silicon Carbide ◽

Cubic Silicon Carbide

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Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.279 ◽

2002 ◽

Vol 389-393 ◽

pp. 279-282 ◽

Author(s):

Tomoaki Furusho ◽

Toshiyuki Miyanagi ◽

Yoichi Okui ◽

Satoru Ohshima ◽

Shigehiro Nishino

Keyword(s):

Silicon Carbide ◽

Homoepitaxial Growth ◽

Cubic Silicon Carbide

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