In situ observation of silicon hydrides on Si(100) surfaces during synchrotron‐radiation‐stimulated Si2H6 gas source molecular beam epitaxy

1995 ◽  
Vol 67 (16) ◽  
pp. 2364-2366 ◽  
Author(s):  
A. Yoshigoe ◽  
K. Mase ◽  
Y. Tsusaka ◽  
T. Urisu ◽  
Y. Kobayashi ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Observation ◽  
Gas Source ◽  
Silicon Hydrides

In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)

1998 ◽  
Vol 16 (3) ◽  
pp. 1938-1943 ◽  
Author(s):  
I. Goldfarb ◽  
J. H. G. Owen ◽  
D. R. Bowler ◽  
C. M. Goringe ◽  
P. T. Hayden ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Observation ◽  
Gas Source ◽  
Silicon And Germanium

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

1997 ◽  
Vol 7 (5) ◽  
pp. 215-224
Author(s):  
B. A. Joyce ◽  
J. Zhang ◽  
A. G. Taylor ◽  
M. H. Xie ◽  
J. M. Fernández ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Silicon ◽  
In Situ Studies ◽  
Gas Source ◽  
Silicon Growth
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