Deep level defects in Mg‐doped, p‐type GaN grown by metalorganic chemical vapor deposition

1996 ◽  
Vol 68 (24) ◽  
pp. 3470-3472 ◽  
Author(s):  
W. Götz ◽  
N. M. Johnson ◽  
D. P. Bour
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
P Type ◽  
Metalorganic Chemical ◽  
Mg Doped

Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 631-634 ◽  
Author(s):  
Doo-Hyeb Youn ◽  
Mohamed Lachab ◽  
Maosheng Hao ◽  
Tomoya Sugahara ◽  
Hironori Takenaka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Activation Mechanism ◽  
P Type ◽  
Metalorganic Chemical ◽  
Mg Doped

Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition

2000 ◽  
Vol 76 (9) ◽  
pp. 1149-1151 ◽  
Author(s):  
K. S. Kim ◽  
M. G. Cheong ◽  
C.-H. Hong ◽  
G. M. Yang ◽  
K. Y. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Hole Transport ◽  
Metalorganic Chemical ◽  
Mg Doped

Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Se Doping ◽  
Transient Spectroscopy ◽  
Low Selenium ◽  
Metalorganic Chemical

ABSTRACTWe have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se)-doping (8.4 × l016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep level transient spectroscopy (DLTS). We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78 As can be eliminated by low Se-doping. In addition, a deep hole level located at Ev+0.65 eV was found for the first time in highly Se-doped Al0.22Ga0.78 As epilayers. We suggest that low Se-doping (<2 × 1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.

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