p-type doping of metalorganic chemical vapor deposition-grown HgCdTe by arsenic and antimony

ABSTRACTP-type GaN films were grown on sapphire substrates in a horizontal metalorganic chemical vapor deposition system using (C5H5)2Mg (Cp2Mg) as the p-dopant source. It is found that the acceptor concentration in the post-growth annealed GaN samples increases with the Mg flow rate and reaches a peak value of 1×1019 cm−3 at Mg flow rate of 0.84 ĉmol/min. The films remain semi-insulating even after annealing when the Mg flow rate is higher than 1.08 ĉmol/min. The effects of annealing temperature and duration on the electrical properties of GaN are also investigated. The results confirm that a 800 °C, 30 minutes post-growth annealing in N2 ambient is sufficient to activate most of the Mg atoms. In addition, study of rapid thermal annealing of Mg-doped GaN was carried out and the results show that the p-type acceptor concentration obtained is comparable to the results obtained using furnace annealing process. Finally, GaN light emitting diodes (LEDs) are demonstrated using undoped layer as the n-type base layer in a p-on-n structure. The light emission spectra are dominated by the 430 nm peak, accompanied with two relatively weak peaks located at 380nm and 550nm.

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Optical Probe in Gadolinium Doped GaN by Metalorganic Chemical Vapor Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.329.109 ◽

2013 ◽

Vol 329 ◽

pp. 109-113

Author(s):

Xiang Ping Shu ◽

Andrew Melton ◽

Zhi Ren Qiu ◽

Lan T. Ferguson ◽

Zhe Chuan Feng

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Optical Probe ◽

Temperature Dependent ◽

Two Samples ◽

Significant Difference ◽

P Type ◽

Metalorganic Chemical

Gd doping related excitons are observed in four samples with different gadolinium (Gd) adoption ratios, grown by metalorganic Chemical Vapor Deposition (MOCVD). The intensity and quenching phenomena with temperature in Gd related excitons are varied from the conduction type of samples. By temperature-dependent photoluminescence measurements the vanish effects in Gd-doping induced excitons show a significant difference from intrinsic and n-type samples to p-type samples. In the former two samples the Gd excitons disappeared beyond 200K, while in p-type samples it is still exist even in 533K.

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Growth of n-Doped and p-Doped GaAs Nanowires by Au-Assisted Metalorganic Chemical Vapor Deposition: Effect of Dopants Flux Rates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.774-776.860 ◽

2013 ◽

Vol 774-776 ◽

pp. 860-863 ◽

Cited By ~ 1

Author(s):

Peng Zhang ◽

Yan Liu ◽

Jing Wei Guo ◽

Xiao Pin Zhang

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Critical Length ◽

Pure Zinc ◽

Gaas Nanowires ◽

Deposition Effect ◽

P Type ◽

Metalorganic Chemical

N-doped and p-doped GaAs nanowires (NWs) are grown on GaAs (111) B substrate using vapor-liquid-solid (VLS) mechanism via a metalorganic chemical vapor deposition (MOCVD) system. It is found that for n-type doped NWs growth rate is proportional the flux rates of dopant and the structure is pure zinc blende without any faults. For p-type doped NWs with large flux rates, there is a critical length, beyond which NWs will be kinked.

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