Scanning tunneling microscopic and spectroscopic characterization of diamond film prepared by capacitively coupled radio frequency CH3OH plasma with OH radical injection

1997 ◽  
Vol 70 (16) ◽  
pp. 2141-2143 ◽  
Author(s):  
Masafumi Ito ◽  
Kazuya Murata ◽  
Koukichi Aiso ◽  
Masaru Hori ◽  
Toshio Goto ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Diamond Film ◽  
Spectroscopic Characterization ◽  
Scanning Tunneling ◽  
Oh Radical ◽  
Capacitively Coupled

Spectroscopic characterization of tissue and liquids during arthroscopic radio‐frequency ablation

2020 ◽  
Vol 47 (8) ◽  
pp. 3703-3709
Author(s):  
Frédéric Cornaz ◽  
Sebastian Valet ◽  
Dominik Christoph Meyer
Keyword(s):  
Radio Frequency ◽  
Spectroscopic Characterization ◽  
Radio Frequency Ablation

Spectroscopic Characterization of Nanoscale Modification of Passivated Si(100) Surface by STM

1994 ◽  
Vol 332 ◽  
Author(s):  
F. PÉRez-Murano ◽  
N. Barniol ◽  
X. Aymerich
Keyword(s):  
Local Density ◽  
Surface States ◽  
Spectroscopic Characterization ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Band Bending ◽  
Sample Spacing ◽  
Current Voltage

ABSTRACTThe electrochemical modification of H-passivated Si(100) surface is produced and characterized by Scanning Tunneling Microscopy and Spectroscopy (STM/STS) operating in air. In order to better understand this nanometer scale modification, we have characterized spectroscopically the modified region. From the current-voltage (I/V) curves, dI/dV versus V curves and tip to sample spacing versus voltage (s/V) curves (at constant current) we have concluded that the modification induces a local electrochemical change on the surface, which in turn produces both, a decrease of the local density of surface states and a variation of the band bending in the silicon surface.

Sign in / Sign up

Export Citation Format

Share Document