Spectroscopic Characterization of Films Obtained in Pulsed Radio-Frequency Plasma Discharges of Fluorocarbon Monomers

1993 ◽  
pp. 745-768 ◽  
Author(s):  
Charles R. Savage ◽  
Richard B. Timmons ◽  
Jacob W. Lin
Keyword(s):  
Radio Frequency ◽  
Spectroscopic Characterization ◽  
Radio Frequency Plasma ◽  
Plasma Discharges ◽  
Frequency Plasma

Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

2006 ◽  
Vol 301 ◽  
pp. 95-98 ◽  
Author(s):  
Masashi Yamashita ◽  
Yukari Ishikawa ◽  
Hitoshi Ohsato ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Radio Frequency Plasma ◽  
Group Iii ◽  
Frequency Plasma

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

2001 ◽  
Vol 30 (3) ◽  
pp. 156-161 ◽  
Author(s):  
Sangbeom Kang ◽  
W. Alan Doolittle ◽  
K. K. Lee ◽  
Z. R. Dai ◽  
Z. L. Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Radio Frequency Plasma ◽  
Frequency Plasma
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