Spin-dependent tunneling junctions with Fe55Ni45 electrodes and in situ resistive measurement of oxide growth

1999 ◽  
Vol 74 (17) ◽  
pp. 2528-2530 ◽  
Author(s):  
Andrew T. A. Wee ◽  
Kyusik Sin ◽  
Shan X. Wang
Keyword(s):  
Oxide Growth ◽  
Tunneling Junctions ◽  
Resistive Measurement

D-64 In-Situ Study of Oxide Growth on a Kanthal Alloy

2004 ◽  
Vol 19 (2) ◽  
pp. 198-198
Author(s):  
E. Üstündag ◽  
J. D. Almer ◽  
J. Nychka ◽  
D. R. Clarke
Keyword(s):  
Oxide Growth ◽  
In Situ Study

Monitoring the in-situ oxide growth on uranium by x-ray photoelectron spectroscopy

2019 ◽  
Vol 6 (10) ◽  
pp. 106449
Author(s):  
Chaolun Sun ◽  
Qifa Pan ◽  
Huoping Zhong ◽  
Yin Hu ◽  
Lizhu Luo ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Growth ◽  
X Ray

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

2010 ◽  
Vol 645-648 ◽  
pp. 813-816 ◽  
Author(s):  
Keiko Kouda ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Spectroscopic Ellipsometry ◽  
Reaction Rate ◽  
Oxidation Process ◽  
Early Stage ◽  
Oxide Thickness ◽  
Oxide Growth ◽  
Low Oxygen ◽  
Partial Pressures

We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen　partial　pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.

Oxide Growth Mechanism on Mg AZ91 Alloy by Anodizing: Combination of Electrochemical and Ellipsometric In-Situ Measurements

2017 ◽  
Vol 164 (14) ◽  
pp. C1059-C1066 ◽  
Author(s):  
Alexandre Zimmer ◽  
Delphine Veys-Renaux ◽  
Laurent Broch ◽  
Nicolas Stein ◽  
Emmanuel Rocca
Keyword(s):  
Growth Mechanism ◽  
In Situ Measurements ◽  
Az91 Alloy ◽  
Oxide Growth

In-Situ Processing of Silicon Dielectrics by Rapid Thermal Processing: Cleaning, Growth, and Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
J. Nulman
Keyword(s):  
Thermal Processing ◽  
Silicon Surface ◽  
Rapid Thermal Processing ◽  
Oxide Growth ◽  
Surface Chemical ◽  
Native Oxides ◽  
Wafer Cleaning ◽  
In Situ Processing ◽  
Kinetics Of

ABSTRACTThe in-situ processing of silicon dielectrics by rapid thermal processing (RTP) is described. RTP includes here three basic sequentially performed processes: wafer cleaning, oxidation and annealing. The insitu cleaning allows for reduction of chemical and native oxides and silicon surface chemical polish, resulting in interface density of states as low as 5×l09 cm-2eV-1. Kinetics of oxide growth indicates an activation energy of 1.4 eV for the initial linear oxidation rate.

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