In-Situ Processing of Silicon Dielectrics by Rapid Thermal Processing: Cleaning, Growth, and Annealing
Keyword(s):
ABSTRACTThe in-situ processing of silicon dielectrics by rapid thermal processing (RTP) is described. RTP includes here three basic sequentially performed processes: wafer cleaning, oxidation and annealing. The insitu cleaning allows for reduction of chemical and native oxides and silicon surface chemical polish, resulting in interface density of states as low as 5×l09 cm-2eV-1. Kinetics of oxide growth indicates an activation energy of 1.4 eV for the initial linear oxidation rate.
2014 ◽
Vol 2
(25)
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pp. 4909-4917
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Keyword(s):
1991 ◽
Vol 34
(2)
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pp. 181-184
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2015 ◽
Vol 86
(1)
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pp. 013902
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1990 ◽