Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications

1999 ◽  
Vol 74 (21) ◽  
pp. 3221-3223 ◽  
Author(s):  
B. Boudart ◽  
C. Gaquière ◽  
S. Trassaert ◽  
M. Constant ◽  
A. Lorriaux ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Raman Characterization

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

2020 ◽  
Vol 257 (4) ◽  
pp. 1900589 ◽  
Author(s):  
Tadatoshi Ito ◽  
Ryota Sakamoto ◽  
Tatsuya Isono ◽  
Yongzhao Yao ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

2013 ◽  
Vol 529 ◽  
pp. 217-221 ◽  
Author(s):  
Ching-Hsiang Chan ◽  
Ching-Hwa Ho ◽  
Ming-Kai Chen ◽  
Yu-Shyan Lin ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Compressive Strain ◽  
High Electron Mobility Transistor ◽  
Optical Characterization ◽  
High Electron ◽  
High Electron Mobility

Characterization of AlGaN/GaN High Electron Mobility Transistor Grown on Silicon Carbide Devices with a Gate Length Lg = 0.15 μm

2011 ◽  
Vol 9 (6) ◽  
pp. 2178-2181 ◽  
Author(s):  
Malek Gassoumi ◽  
Mohamed Mongi Ben Salem ◽  
Salah Saadaoui ◽  
Walf Chikhaoui ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility
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