Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio

2000 ◽  
Vol 76 (7) ◽  
pp. 879-881 ◽  
Author(s):  
R. Duschl ◽  
O. G. Schmidt ◽  
K. Eberl
Keyword(s):  
Room Temperature ◽  
Temperature Peak ◽  
Tunneling Diodes ◽  
Interband Tunneling ◽  
Peak To Valley Ratio

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

1998 ◽  
Vol 73 (15) ◽  
pp. 2191-2193 ◽  
Author(s):  
Sean L. Rommel ◽  
Thomas E. Dillon ◽  
M. W. Dashiell ◽  
H. Feng ◽  
J. Kolodzey ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunneling Diodes ◽  
Interband Tunneling ◽  
Room Temperature Operation

Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)

2010 ◽  
Vol 57 (11) ◽  
pp. 2857-2863 ◽  
Author(s):  
Michael Oehme ◽  
Marko Sarlija ◽  
Daniel Hahnel ◽  
Mathias Kaschel ◽  
Jens Werner ◽  
...  
Keyword(s):  
Room Temperature ◽  
Temperature Peak ◽  
Current Ratio ◽  
Tunneling Diodes ◽  
Very High
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