Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon

2000 ◽  
Vol 88 (5) ◽  
pp. 2309-2317 ◽  
Author(s):  
D. C. Schmidt ◽  
B. G. Svensson ◽  
M. Seibt ◽  
C. Jagadish ◽  
G. Davies
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
Ion Implanted

Defects Related to Sb-Mediated Ge Quantum Dots

2013 ◽  
Vol 205-206 ◽  
pp. 497-501
Author(s):  
Alexander A. Tonkikh ◽  
Victor Tapio Rangel-Kuoppa ◽  
Nikolay D. Zakharov ◽  
Wolfgang Jantsch ◽  
Peter Werner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Band Gap ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Valence Band Edge ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
Active Trap

We report on a specific defect, which may form during the growth of Stranski-Krastanov surfactant-mediated Ge/Si (100) islands. Transmission electron microscopy reveals that these loop-like defects are local and could be represented by a missing plane of Ge atoms inside some of Ge islands. This specific defect may generate an electrically active trap within the Si band gap at about 0.3 eV above the Si valence band edge. Deep level transient spectroscopy reveals that at least 1 % of Ge islands may include such defects.

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

2015 ◽  
Vol 242 ◽  
pp. 163-168 ◽  
Author(s):  
Ilia L. Kolevatov ◽  
Frank Herklotz ◽  
Viktor Bobal ◽  
Bengt Gunnar Svensson ◽  
Edouard V. Monakhov
Keyword(s):  
Schottky Diode ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Energy Levels ◽  
Depletion Region ◽  
Type Silicon ◽  
Oxygen Center ◽  
Hydrogen Vacancy ◽  
Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

Transmission electron microscopy studies of crystal-to-amorphous transition in ion implanted silicon

1997 ◽  
Vol 81 (3) ◽  
pp. 1126-1130 ◽  
Author(s):  
Manabu Ishimaru ◽  
Shinsuke Harada ◽  
Teruaki Motooka
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Ion Implanted

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1992-1995 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Deep–Level Transient Spectroscopy Studies of Czochralski–Grown N–Type Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Yutaka Tokuda ◽  
Isao Katoh ◽  
Masayuki Katayama ◽  
Tadasi Hattori
Keyword(s):  
Crystal Growth ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Cooling Period ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

AbstractElectron traps in Czochralski–grown n-type (100) silicon with and without donor annihilation annealing have been studied by deep–level transient spectroscopy. A total of eight electron traps are observed in the concentration range 1010 –1011 cm −3. It is thought that these are grown–in defects during crystal growth cooling period including donor annihilation annealing. It is suggested that two electron traps labelled A2 (Ec–0.34 eV) and A3 (Ec–0.38 eV) of these traps are correlated with oxygen–related defects. It is shown that traps A2 and A3 are formed around 400 ° C and disappear around 500–600 ° C.

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