scholarly journals Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

2001 ◽  
Vol 89 (4) ◽  
pp. 2404-2413 ◽  
Author(s):  
W. M. M. Kessels ◽  
R. J. Severens ◽  
A. H. M. Smets ◽  
B. A. Korevaar ◽  
G. J. Adriaenssens ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Growth Rates ◽  
Hydrogenated Amorphous Silicon ◽  
High Growth ◽  
Hydrogenated Amorphous ◽  
Very High

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

scholarly journals Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

2002 ◽  
Vol 715 ◽  
Author(s):  
B.A. Korevaar ◽  
C. Smit ◽  
A.M.H.N. Petit ◽  
R.A.C.M.M. van Swaaij ◽  
M.C.M. van de Sanden
Keyword(s):  
Amorphous Silicon ◽  
Buffer Layer ◽  
Thermal Plasma ◽  
Growth Rates ◽  
Fill Factor ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Temperature Limit ◽  
Cell Efficiency ◽  
Hydrogenated Amorphous

AbstractA cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates between 0.2 and 3 nm/s. Incorporation into a single junction p-i-n solar cell resulted in an initial efficiency of 6.7%, whereas all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. In this cell the intrinsic layer was deposited at 0.85 nm/s and at a deposition temperature of 250°C, which is the temperature limit for growing the p-i-n sequence. The cell efficiency is limited by the fill factor and using a buffer layer at the p-i interface deposited with RF-PECVD at low growth rate can increase this. The increase in fill factor is a result of a lower initial defect density near the p-i interface then obtained with the expanding thermal plasma, resulting in better charge carrier collection. To use larger growth rates, while maintaining the material properties, higher deposition temperatures are required. Higher deposition temperatures result in a smaller optical bandgap for the intrinsic layer and deterioration of the p-type layer, resulting in a lower opencircuit voltage. First results on applying a buffer layer will also be presented.

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