Study of effects of interelectrode spacing and preheating of source gases on hydrogenated amorphous silicon films prepared at high growth rates

1995 ◽  
Vol 78 (5) ◽  
pp. 3193-3199 ◽  
Author(s):  
Debabrata Das ◽  
S. Chattopadhyay ◽  
A. K. Barua ◽  
Ratnabali Banerjee
Keyword(s):  
Amorphous Silicon ◽  
Growth Rates ◽  
Hydrogenated Amorphous Silicon ◽  
High Growth ◽  
Silicon Films ◽  
Interelectrode Spacing ◽  
Hydrogenated Amorphous

scholarly journals Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

2001 ◽  
Vol 89 (4) ◽  
pp. 2404-2413 ◽  
Author(s):  
W. M. M. Kessels ◽  
R. J. Severens ◽  
A. H. M. Smets ◽  
B. A. Korevaar ◽  
G. J. Adriaenssens ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Growth Rates ◽  
Hydrogenated Amorphous Silicon ◽  
High Growth ◽  
Hydrogenated Amorphous ◽  
Very High
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