ABSTRACTNickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.
The thermal and electrical transport properties of carbon micro-coils under the condition of common use were measured and discussed. The temperature-dependence, the load-bearing stability, the explicit and implicit values of those properties were brought forward to provide the references for their reliable industrial design and high efficient service.
The Hall coefficient, magnetoresistance, and thermoelectric power of several specimens of NbSe2 have been measured as a function of temperature for various crystal orientations. A range of behaviour of the Hall coefficient has been observed varying from a reversal at 27 K for the purest specimen to no temperature dependence for the most impure. The magnetoresistance shows large deviations from Kohler's rule which are correlated with the Hall reversal. The results are discussed in terms of a possible phase change or a two-band model.
Temperature dependence of the electrical transport properties in few-layer graphene interconnects