Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

2000 ◽  
Vol 611 ◽  
Author(s):  
X. W. Zhang ◽  
S. P. Wong ◽  
W. Y. Cheung ◽  
F. Zhang
Keyword(s):  
Ion Implantation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Metal Vapor ◽  
Nickel Silicide ◽  
Ion Source ◽  
Vacuum Arc ◽  
Band Model ◽  
Electrical Transport Properties ◽  
Nickel Ion

ABSTRACTNickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

Al Ion Implantation of SiC Coated Carbon Fiber-Reinforced SiC Matrix Composites by Metal Vapor Vacuum Arc Ion Source

2011 ◽  
Vol 415-417 ◽  
pp. 76-79
Author(s):  
Guo Jia Ma ◽  
Guo Qiang Lin ◽  
Hong Chen Wu
Keyword(s):  
Carbon Fiber ◽  
Ion Implantation ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Fiber Reinforced ◽  
Aluminum Ions ◽  
Carbon Fiber Reinforced ◽  
Sic Composites ◽  
Coated Carbon

SiC coated carbon fiber-reinforced SiC matrix (C/SiC) composites were implanted with aluminum ions by metal vapor vacuum arc ion source to improve their oxidation resistance. Depth profile of the aluminum ions in the SiC coated C/SiC composites was checked by Auger electronic energy spectrum. Oxidation tests were performed in flowing dry air at 1300°C on the SiC coated C/SiC composites. The samples with ion implantation exhibited lower weight loss than those without aluminum ion implantation. The surface morphologies of the samples were obtained by scanning electronic microscope. As compared with the mechanical properties of the samples without ion implantation, those of ion-implanted samples changed little.

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