Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

2002 ◽  
Vol 91 (4) ◽  
pp. 2429-2432 ◽  
Author(s):  
L. J. Cui ◽  
Y. P. Zeng ◽  
B. Q. Wang ◽  
J. Wu ◽  
Z. P. Zhu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gaas Substrates ◽  
Annealing Effects

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

scholarly journals Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

2015 ◽  
Vol 107 (26) ◽  
pp. 262105 ◽  
Author(s):  
X. Li ◽  
J. Bergsten ◽  
D. Nilsson ◽  
Ö. Danielsson ◽  
H. Pedersen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Carbon Doped ◽  
Gan Buffer Layer
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