Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping
2002 ◽
Vol 243
(1)
◽
pp. 66-70
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1998 ◽
Vol 31
(2)
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pp. 159-164
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2006 ◽
Vol 45
(No. 35)
◽
pp. L932-L934
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