Effects of postgrowth rapid thermal annealing on InAlAs∕InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs∕InGaAlAs buffer
2002 ◽
Vol 243
(1)
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pp. 66-70
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1998 ◽
Vol 31
(2)
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pp. 159-164
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2006 ◽
Vol 45
(No. 35)
◽
pp. L932-L934
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