Surface nitrogen concentration dependence of the nitrogen incorporation in reactively sputtered FeXN films

Numerous nitridation processes have been studied to obtain very thin (≤ 6 nm), reproducible and reliable gate oxides. Recent results (1,2,3) have confirmed that i) the NO molecule is the species responsible for the nitrogen incorporation at the SiO2/Si interface and that ii) the direct use of NO gas allows the gate oxide to be nitrided at low thermal budget whilst maintaining the same advantages as those of N2O nitridation. NO nitridation of very thin oxides has so far been inadequately documented in terms of incorporated nitrogen concentration at the SiO2/Si interface. It is of prime importance to control the incorporation of a few nitrogen monolayers at the SiO2/Si interface, particularly for device performances in the 0. 18μm CMOS technology. In the following we present results on the control of low nitrogen concentration in pure NO atmosphere, with particular emphasis on a method based on the re-oxidation of nitrided oxides. This method can be used in a production line thus avoiding the high costs and long characterization times associated with SIMS measurements.

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Nitrogen concentration dependence of photoluminescence decay time in GaP1−xNx alloys

Solid-State Electronics ◽

10.1016/s0038-1101(96)00206-7 ◽

1997 ◽

Vol 41 (2) ◽

pp. 231-233 ◽

Cited By ~ 17

Author(s):

Hiroyuki Yaguchi ◽

Seiro Miyoshi ◽

Hideo Arimoto ◽

Shiro Saito ◽

Hidefumi Akiyama ◽

...

Keyword(s):

Concentration Dependence ◽

Decay Time ◽

Nitrogen Concentration ◽

Photoluminescence Decay

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Nitrogen Concentration Dependence on Two-Step Photocurrent Generation in GaNAs/AlGaAs Solar Cells

Renewable Energy and the Environment Optics and Photonics Congress ◽

10.1364/e2.2012.jm5a.13 ◽

2012 ◽

Author(s):

Martin Elborg ◽

Masafumi Jo ◽

Takeshi Noda ◽

Takaaki Mano ◽

Yoshiki Sakuma ◽

...

Keyword(s):

Solar Cells ◽

Concentration Dependence ◽

Nitrogen Concentration ◽

Photocurrent Generation

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N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence

Nano-Micro Letters ◽

10.1007/s40820-020-0395-5 ◽

2020 ◽

Vol 12 (1) ◽

Cited By ~ 7

Author(s):

Neelakandan M. Santhosh ◽

Gregor Filipič ◽

Eva Kovacevic ◽

Andrea Jagodar ◽

Johannes Berndt ◽

...

Keyword(s):

Experimental Evidence ◽

Nitrogen Concentration ◽

Structural Defects ◽

Remarkable Difference ◽

Conductivity Measurements ◽

Plasma Surface ◽

Nitrogen Incorporation ◽

Gaseous Plasma ◽

Application Specific ◽

Incorporated Nitrogen

AbstractIncorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma–surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C–N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.

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