scholarly journals N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Neelakandan M. Santhosh ◽  
Gregor Filipič ◽  
Eva Kovacevic ◽  
Andrea Jagodar ◽  
Johannes Berndt ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Nitrogen Concentration ◽  
Structural Defects ◽  
Remarkable Difference ◽  
Conductivity Measurements ◽  
Plasma Surface ◽  
Nitrogen Incorporation ◽  
Gaseous Plasma ◽  
Application Specific ◽  
Incorporated Nitrogen

AbstractIncorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma–surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C–N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.

Dielectric properties and specific conductivity of armenian natural clinoptilolite irradiated by electrons

Open Physics ◽  
2005 ◽  
Vol 3 (4) ◽  
Author(s):  
Hrant Yeritsyan ◽  
Aram Sahakyan ◽  
Sergey Nikoghosyan ◽  
Vachagan Harutiunian ◽  
Volodia Gevorkyan ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Electron Irradiation ◽  
Specific Conductivity ◽  
Structural Defects ◽  
Conductivity Measurements ◽  
Specific Electric Conductivity ◽  
Order Of Magnitude ◽  
Natural Clinoptilolite ◽  
Temperature Heating ◽  
High Temperature Heating

AbstractThe results of dielectric properties and direct current specific electric conductivity measurements in Armenian natural clinoptilolite samples are presented. Electron irradiation with energy 8 MeV and thermal treatment of samples are performed to elucidate possible enhancement mechanisms of clinoptilolite parameters. The results are discussed on the basis of new point structural defects formation and recombination of initial ones in samples. It was shown that the irradiation dose of 3·1016 el/cm2 is critical for natural zeolite structural change, which is manifested by significant changes in dielectric properties and other characteristics. The samples subjected to high temperature heating after electron irradiation, in comparison with an unquenched one, have a significantly higher (about an order of magnitude) value of specific conductivity.

Study of Nitrogen Incorporation in Gate Oxides Using the Resistance to Oxidation Method

1996 ◽  
Vol 429 ◽  
Author(s):  
I. Sagnes ◽  
D. Laviale ◽  
M. Regache ◽  
F. Glowacki ◽  
L. Deutschmann ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Gate Oxides ◽  
Thermal Budget ◽  
Nitrogen Incorporation ◽  
Resistance To Oxidation ◽  
Low Thermal Budget ◽  
Direct Use ◽  
Low Nitrogen

Numerous nitridation processes have been studied to obtain very thin (≤ 6 nm), reproducible and reliable gate oxides. Recent results (1,2,3) have confirmed that i) the NO molecule is the species responsible for the nitrogen incorporation at the SiO2/Si interface and that ii) the direct use of NO gas allows the gate oxide to be nitrided at low thermal budget whilst maintaining the same advantages as those of N2O nitridation. NO nitridation of very thin oxides has so far been inadequately documented in terms of incorporated nitrogen concentration at the SiO2/Si interface. It is of prime importance to control the incorporation of a few nitrogen monolayers at the SiO2/Si interface, particularly for device performances in the 0. 18μm CMOS technology. In the following we present results on the control of low nitrogen concentration in pure NO atmosphere, with particular emphasis on a method based on the re-oxidation of nitrided oxides. This method can be used in a production line thus avoiding the high costs and long characterization times associated with SIMS measurements.

Microstructure of Buried Thin Etch Stop Films Formed by Nitrogen Implantation into Silicon

1993 ◽  
Vol 308 ◽  
Author(s):  
A. Romano-Rodriguez ◽  
A. El-Hassani ◽  
A. Perez-Rodriguez ◽  
J. Samitier ◽  
J.R. Morante ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Surface Region ◽  
Implantation Dose ◽  
Structural Defects ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Etch Stop ◽  
Crystalline Nature ◽  
Buried Layers ◽  
Nitrogen Ion

ABSTRACTThe microstructure of buried layers obtained by medium to high dose nitrogen ion implantation in silicon for etch-stop applications is investigated as a function of the implantation conditions (dose and temperature). Samples are analyzed by TEM, SIMS, FTIR and XPS measurements. The correlation between the data from the different techniques allows to characterize the different layers in the structure, determining the phases induced during the process, the crystalline nature of the layers and the presence of structural defects. The obtained data show the gettering of nitrogen after annealing in both a buried layer around the implantation peak and in the surface region. The nitrogen concentration in these regions and the formation and nature of silicon nitride precipitates show strong dependences with the implantation dose and temperature.

scholarly journals DIELECTRIC MEASUREMENTS ON PURE AND KDP ADDED DISODIUM HYDROGEN PHOSPHATE (DSHP) SINGLE CRYSTALS

2021 ◽  
pp. 12-15
Author(s):  
J. Asbalter ◽  
S. Mugundakumari ◽  
N. Joseph John
Keyword(s):  
Electrical Conductivity ◽  
Single Crystals ◽  
Room Temperature ◽  
Structural Defects ◽  
Conductivity Measurements ◽  
Disodium Hydrogen Phosphate ◽  
Parallel Plate Capacitor ◽  
Dc Conductivities ◽  
Increase With Increase ◽  
Experimental Tool

Electrical conductivity is an elegant experimental tool to probe the structural defects and internal purity of crystalline solids. In the present study we have grown pure and KDP added DSHP single crystals by the slow evaporation method from aqueous solutions at room temperature. Good quality transparent crystals have been obtained. Melting point and density measurements were done. Electrical conductivity measurements were carried out with two frequencies, 100 Hz and 1 kHz at various temperatures ranging from 2 to 30oC by using the parallel plate capacitor method. The present study indicate that the dielectric constant and AC and DC conductivities increase with increase of temperature.

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 60-63 ◽  
Author(s):  
Nikolaos Tsavdaris ◽  
Pawel Kwasnicki ◽  
Kanaparin Ariyawong ◽  
Nathalie Valle ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Temperature Dependent ◽  
Bulk Crystal Growth ◽  
Bond Density ◽  
Nitrogen Incorporation ◽  
Nitrogen Desorption ◽  
Sublimation Method ◽  
The Difference ◽  
Sublimation Growth ◽  
Incorporated Nitrogen

We address the problem of nitrogen incorporation during bulk crystal growth of 4H-SiC and 6H-SiC by seeded sublimation method. The partial pressure of nitrogen and temperature dependence were considered in bulk SiC crystals. Free carrier concentration and incorporated nitrogen were determined using Raman spectroscopy and Secondary Ion Mass Spectrometry, respectively. The incorporated nitrogen at the (000-1) C-face of 4H-SiC and 6H-SiC is found to be independent of the polytype of the crystal. Higher desorption rate at Si-face compared to C-face is found, using a Langmuir equation, which is attributed to the difference in bond density between the two polar faces. The increased nitrogen desorption when growth temperature increases is believed to be the most contributing factor, based on the temperature dependent trends.

How do memory modules differentially contribute to familiarity and recollection?

2019 ◽  
Vol 42 ◽  
Author(s):  
Olya Hakobyan ◽  
Sen Cheng
Keyword(s):  
Recognition Memory ◽  
Experimental Evidence ◽  
Subjective Experience ◽  
Target Article ◽  
Memory Modules ◽  
Familiarity And Recollection ◽  
Memory Contents

Abstract We fully support dissociating the subjective experience from the memory contents in recognition memory, as Bastin et al. posit in the target article. However, having two generic memory modules with qualitatively different functions is not mandatory and is in fact inconsistent with experimental evidence. We propose that quantitative differences in the properties of the memory modules can account for the apparent dissociation of recollection and familiarity along anatomical lines.

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