Processing dependence of texture development in La[sub 2]Zr[sub 2]O[sub 7] buffer layer by sol-gel technique for YBCO coated conductors

2002 ◽  
Author(s):  
E. Celik
Keyword(s):  
Buffer Layer ◽  
Sol Gel ◽  
Coated Conductors ◽  
Texture Development ◽  
Gel Technique ◽  
Ybco Coated Conductors

Sol–gel deposition of high-performance Re0.2Ce0.8O2/La2Zr2O7 composite buffer layers on Ni–W tapes for YBCO coated conductors

2015 ◽  
Vol 77 (1) ◽  
pp. 94-99 ◽  
Author(s):  
Weibai Bian ◽  
Yuanqing Chen ◽  
Xinni Tang ◽  
Weihua Zhang ◽  
Gaoyang Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Sol Gel ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Ybco Coated Conductors

Preparation of epitaxial La2-xGdxZr2O7 buffer layer for coated conductors using sol-gel method

2020 ◽  
Vol 250 ◽  
pp. 123147
Author(s):  
Limin Li ◽  
Gaoyang Zhao ◽  
Li Lei ◽  
Fuxue Yan ◽  
Bo Deng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Sol Gel ◽  
Coated Conductors ◽  
Gel Method ◽  
Sol Gel Method

A novel process for CeO2single buffer layer on biaxially textured metal substrates in YBCO coated conductors

2006 ◽  
Vol 19 (10) ◽  
pp. 1068-1072 ◽  
Author(s):  
Jie Xiong ◽  
Yin Chen ◽  
Yang Qiu ◽  
Bowan Tao ◽  
Wenfeng Qin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Coated Conductors ◽  
Metal Substrates ◽  
Ybco Coated Conductors

scholarly journals A comparison of buffer layer architectures on continuously processed YBCO coated conductors based on the IBAD YSZ process

2001 ◽  
Vol 11 (1) ◽  
pp. 3359-3364 ◽  
Author(s):  
T.G. Holesinger ◽  
S.R. Foltyn ◽  
P.N. Arendt ◽  
Quanxi Jia ◽  
P.C. Dowden ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Coated Conductors ◽  
Ybco Coated Conductors

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Effects of Buffer Layer on the Fabrication and Characteristics of Ferroelectric Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Han Wook Song ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Kwang Ho Kim ◽  
Tae-Hyun Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Sol Gel ◽  
Optimum Thickness ◽  
Si Substrate ◽  
Barrier Effects ◽  
Pzt Thin Film ◽  
Different Temperatures ◽  
Gel Technique

ABSTRACTMgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.

scholarly journals Reel-to-reel continuous deposition of CexZr1-xO2single buffer layer for YBCO coated conductors

2009 ◽  
Vol 153 ◽  
pp. 012036 ◽  
Author(s):  
Jie Xiong ◽  
Bowan Tao ◽  
Wenfeng Qin ◽  
Xiao Feng ◽  
Xiaoke Song ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Coated Conductors ◽  
Continuous Deposition ◽  
Ybco Coated Conductors

Lanthanum zirconate: A single buffer layer processed by solution deposition for coated conductor fabrication

2002 ◽  
Vol 17 (9) ◽  
pp. 2181-2184 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
H-Y. Zhai ◽  
H. M. Christen ◽  
P. P. Martin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Low Cost ◽  
Sol Gel ◽  
Single Layer ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Solution Deposition ◽  
Sol Gel Process ◽  
Current Densities ◽  
First Time

A single layer of La2Zr2O7 (LZO), deposited on textured Ni and Ni–1.7% Fe–3% W (Ni–W) tapes by a low-cost sol-gel process, is used as buffer layer for the growth of YBa2Cu3O7−δ (YBCO) coated conductors. It is shown for the first time that such single buffer layers can be used for the deposition of YBCO yielding critical current densities (Jc) that are comparable to those typically obtained using CeO2/YSZ/Y2O2 trilayers on identical substrates, i.e., in excess of 1 MA/cm2 at 77 K and self-field. The properties of the YBCO films and the dependence of Jc on thickness of the LZO layer are investigated.

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