Lanthanum zirconate: A single buffer layer processed by solution deposition for coated conductor fabrication

2002 ◽  
Vol 17 (9) ◽  
pp. 2181-2184 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
H-Y. Zhai ◽  
H. M. Christen ◽  
P. P. Martin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Low Cost ◽  
Sol Gel ◽  
Single Layer ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Solution Deposition ◽  
Sol Gel Process ◽  
Current Densities ◽  
First Time

A single layer of La2Zr2O7 (LZO), deposited on textured Ni and Ni–1.7% Fe–3% W (Ni–W) tapes by a low-cost sol-gel process, is used as buffer layer for the growth of YBa2Cu3O7−δ (YBCO) coated conductors. It is shown for the first time that such single buffer layers can be used for the deposition of YBCO yielding critical current densities (Jc) that are comparable to those typically obtained using CeO2/YSZ/Y2O2 trilayers on identical substrates, i.e., in excess of 1 MA/cm2 at 77 K and self-field. The properties of the YBCO films and the dependence of Jc on thickness of the LZO layer are investigated.

Chemical Solution Deposition of Lanthanum Zirconate Buffer Layers on Biaxially Textured Ni–1.7% Fe–3% W Alloy Substrates for Coated-conductor Fabrication

2002 ◽  
Vol 17 (6) ◽  
pp. 1543-1549 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
T. Aytug ◽  
B. W. Kang ◽  
P. M. Martin ◽  
...  
Keyword(s):  
Sol Gel ◽  
Rf Sputtering ◽  
Cube Texture ◽  
Dip Coating ◽  
Buffer Layers ◽  
Lanthanum Zirconate ◽  
Solution Deposition ◽  
Ybco Films ◽  
Current Densities ◽  
Gel Processing

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni–1.7% Fe–3% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effects of increasing the annealing speed on the texture, microstructure, and carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of yttria-stabilized zirconia and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using pulsed laser deposition. Critical current densities (Jc) of 1.9 MA/cm2 at 77 K and self-field and 0.34 MA/cm2at 77 K and 0.5 T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers and the highest ever obtained using solution seed layers.

scholarly journals Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer

2018 ◽  
Vol 8 (7) ◽  
pp. 1195 ◽  
Author(s):  
Yanru Chen ◽  
Xianglin Mei ◽  
Xiaolin Liu ◽  
Bin Wu ◽  
Junfeng Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
High Efficiency ◽  
Low Cost ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Cdte Nanocrystal ◽  
First Time

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.

scholarly journals Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process

1999 ◽  
Vol 574 ◽  
Author(s):  
T. G. Chirayil ◽  
M. Paranthaman ◽  
D. B. Beach ◽  
J. S. Morrelli ◽  
E. Y. Sun ◽  
...  
Keyword(s):  
Sol Gel ◽  
Precursor Solution ◽  
Amorphous Film ◽  
Dip Coating ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Axis Orientation ◽  
Sol Gel Process ◽  
Out Of Plane ◽  
Coating Methods

AbstractIn order to develop an alternative buffer layer architecture using the sol-gel process to produce YBCO (YBa2Cu3O7-δ) coated conductors, Yb2O3 has been chosen as the candidate material. Buffer layers of Yb2O3 were epitaxially grown on biaxially textured-Ni (100) substrates by the sol gel process for the first time. The Yb2O3 precursor solution was prepared from an alkoxide sol-gel route in 2-methoxyethanol and was deposited on textured-Ni (100) substrates by either spin coating or dip coating methods. The amorphous film was then processed at 1160°C under flowing (96%)Ar/H2(4%) gas mixture for one hour. The Yb2O3 film exhibited a strong c-axis orientation on the Ni (100) substrates. The phi and omega scans indicated good in plane and out of plane orientations. The X-ray (222) pole figure showed a cube-on-cube epitaxy. High current YBCO films were grown on the Yb2O3 sol-gel buffered-Ni substrates.

scholarly journals Possible new single-buffer layers for YBa2Cu3O7−y coated conductors prepared by chemical solution deposition

2007 ◽  
Vol 22 (9) ◽  
pp. 2398-2403 ◽  
Author(s):  
Guo Li ◽  
Minghua Pu ◽  
Huaming Zhou ◽  
Xiaohua Du ◽  
Yanbing Zhang ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Low Cost ◽  
Precursor Solution ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Yttrium Nitrate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Heat Treated

New single-buffer layers of YBiO3 and SmBiO3 have been proposed for YBa2Cu3O7−y (YBCO) and SmBa2Cu3O7−y coated conductors. Highly c-axis oriented YBiO3 and SmBiO3 buffer layers have been deposited on single-crystal LaAlO3 and SrTiO3, respectively, by a low-cost chemical solution deposition method in a temperature range as low as 730 to 800 °C in air. Precursor solution of yttrium nitrate, samarium nitrate, and bismuth nitrate has been deposited using spin coating and heat treated in air in a single stage to yield textured YBiO3 and SmBiO3 buffers. A very dense, smooth, pinhole-free, and crack-free morphology has been observed for both buffers. Dense, homogeneous, and epitaxially grown YBCO film with thickness about 300 nm has been obtained on YBiO3 buffer with onset critical temperature 90 K and Jc (77 K, self-field) over 3 MA/cm2. These results offer an effective alternative to prepare desirable buffer layer(s) for YBCO-coated conductors.

scholarly journals All-Solution-Processed InGaO3(ZnO)mThin Films with Layered Structure

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Sung Woon Cho ◽  
Jun Hyeon Kim ◽  
Sangwoo Shin ◽  
Hyung Hee Cho ◽  
Hyung Koun Cho
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Phonon Scattering ◽  
Sol Gel ◽  
Preferred Orientation ◽  
Buffer Layers ◽  
Two Phase ◽  
Superlattice Structure ◽  
Sol Gel Process ◽  
Zno Buffer Layer

We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the InGaZnO thin film on the ZnO buffer layer with preferred orientation showed periodic diffraction patterns in the X-ray diffraction, resulting in a superlattice structure. This film consisted of nanosized grains with two phases of InGaO3(ZnO)1and InGaO3(ZnO)2in InGaZnO polycrystal. On the other hand, the use of no ZnO buffer layer and randomly oriented ZnO buffer induced the absence of the InGaZnO crystal related patterns. This indicated that the ZnO buffer with highc-axis preferred orientation reduced the critical temperature for the crystallization of the layered InGaZnO. The InGaZnO thin films formed with nanosized grains of two-phase InGaO3(ZnO)msuperlattice showed considerably low thermal conductivity (1.14 Wm−1 K−1at 325 K) due to the phonon scattering from grain boundaries as well as interfaces in the superlattice grain.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

Deposition of rare earth tantalate buffers on textured Ni-W substrates for YBCO coated conductor using chemical solution deposition approach

2006 ◽  
Vol 21 (3) ◽  
pp. 767-773 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
A. Goyal ◽  
L. Heatherly ◽  
D.B. Beach
Keyword(s):  
Rare Earth ◽  
Chemical Solution Deposition ◽  
Precursor Solution ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ybco Coated Conductors

Epitaxial films of rare-earth (RE = La, Ce, Eu, and Gd) tantalates, RE3TaO7 with pyrochlore structures were grown on biaxially textured nickel-3 at.% tungsten (Ni-W) substrates using chemical solution deposition (CSD) process. Precursor solution of 0.3∼0.4 M concentration of total cations were spin coated on to short samples of Ni-W substrates and the films were crystallized at 1050∼1100 °C in a gas mixture of Ar- 4% H2 for 15 to 60 min. X-ray studies show that the films of pyrochlore RE tantalate films are highly textured with cube-on-cube epitaxy. Improved texture was observed in case of lanthanum tantalate (La3TaO7) film grown on Ni-W substrates. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations of RE3TaO7 films reveal a fairly dense and smooth microstructure without cracks and porosity. The rare-earth tantalate layers may be potentially used as buffer layers for YBa2Cu3O7-δ (YBCO) coated conductors.

Textured growth of multi-layered buffer layers on Ni tape by sol-gel process

2003 ◽  
Vol 13 (2) ◽  
pp. 2673-2676 ◽  
Author(s):  
Y. Akin ◽  
Z. Aslanoglu ◽  
E. Celik ◽  
L. Arda ◽  
W. Sigmund ◽  
...  
Keyword(s):  
Sol Gel ◽  
Buffer Layers ◽  
Sol Gel Process
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